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What is 3N170?

This electronic component, produced by the manufacturer "Micross", performs the same function as "High Speed Switch".


3N170 Datasheet PDF - Micross

Part Number 3N170
Description High Speed Switch
Manufacturers Micross 
Logo Micross Logo 


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3N170
N-CHANNEL MOSFET
The 3N170 is an enhancement mode N-Channel Mosfet
The 3N170 is an enhancement mode N-Channel Mosfet
designed for use as a General Purpose amplifier or
switch
The hermetically sealed TO-72 package is well suited
for high reliability and harsh environment applications.
FEATURES 
DIRECT REPLACEMENT FOR INTERSIL 3N170 
LOW DRAIN TO SOURCE RESISTANCE 
FAST SWITCHING 
ABSOLUTE MAXIMUM RATINGS  
@ 25°C (unless otherwise noted) 
rDS(on) ≤ 200Ω 
td(on) ≤ 3.0ns 
(See Packaging Information).
Maximum Temperatures 
Storage Temperature 
65°C to +150°C 
Operating Junction Temperature 
55°C to +135°C 
3N170 Features:
Maximum Power Dissipation 
ƒ Low ON Resistance
ƒ Low Capacitance
ƒ High Gain
ƒ High Gate Breakdown Voltage
ƒ Low Threshold Voltage
Continuous Power Dissipation  
MAXIMUM CURRENT
Drain to Source (Note 1) 
MAXIMUM VOLTAGES 
Drain to Gate 
Drain to Source 
300mW 
30mA 
±35V 
25V 
Peak Gate to Source (Note 2) 
±35V 
  
3N170 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL 
CHARACTERISTIC 
MIN  TYP. 
MAX 
UNITS 
CONDITIONS 
BVDSS 
VDS(on) 
Drain to Source Breakdown Voltage  25 
Drain to Source “On” Voltage 
‐‐ 
‐‐ 
‐‐ 
‐‐ 
2.0 
  ID = 10µA,   VGS = 0V 
V                     ID = 10mA,   VGS = 10V 
VGS(th) 
Gate to Source Threshold Voltage  1.0 
‐‐ 
2.0 
VDS = 10V,    ID = 10µA 
IGSS 
Gate Leakage Current 
‐‐  ‐‐ 
10 
IDSS 
Drain Leakage Current “Off” 
‐‐  ‐‐ 
10 
pA 
nA 
VGS = ‐35V,   VDS = 0V 
VGS = 10V,   VDS = 10V 
ID(on) 
gfs 
rDS(on) 
Crss 
ClickCiss 
Drain Current “On” 
Forward Transconductance 
Drain to Source “On” Resistance 
Reverse Transfer Capacitance 
Input Capacitance 
10 
1000 
‐‐ 
‐‐ 
‐‐ 
To‐‐  ‐‐ 
‐‐  ‐‐ 
‐‐  200 
‐‐  1.3 
‐‐  5 
BuymA  VGS = 10V,  VDS = 10V 
µS  VDS = 10V,    ID = 2mA ,   f = 1kHz 
Ω  VGS = 10V,   ID = 0A,   f = 1kHz 
  VDS = 0V,     VGS = 0V ,   f = 1MHz 
pF  VDS = 10V,     VGS = 0V ,   f = 1MHz 
Cdb 
Drain to Body Capacitance 
‐‐  ‐‐  5.0 
VDB = 10V,   f = 1MHz 
 
 
  
 
 
 
SWITCHING CHARACTERISTICS                                                                                                                                      
SYMBOL 
CHARACTERISTIC 
MAX  UNITS 
CONDITIONS 
td(on) 
tr 
Turn On Delay Time 
Turn On Rise Time 
3   
10  ns 
 
VDD = 10V,  ID(on) = 10mA, VGS(on) = 10V, VGS(off) = 0V, RG = 50Ω 
td(off) 
Turn Off Delay Time 
3 
tf 
Turn Off Fall Time 
15 
Note 1 ‐ Absolute maximum ratings are limiting values above which 3N170 serviceability may be impaired. 
Micross Components Europe
Tel: +44 1603 788967
Web: http://www.micross.com/distribution
Available Packages:
3N170 in TO-72
3N170 in bare die.
Please contact Micross for full
package and die dimensions
TO-72 (Bottom View)
* Body tied to case
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx


Part Details

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