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PDF 3N163 Data sheet ( Hoja de datos )
| Número de pieza | 3N163 | |
| Descripción | High Speed Switch | |
| Fabricantes | Micross | |
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3N163
P-CHANNEL MOSFET
The 3N163 is an enhancement mode P-Channel Mosfet
The 3N163 is an enhancement mode P-Channel Mosfet
designed for use as a General Purpose amplifier or
switch
FEATURES
DIRECT REPLACEMENT FOR INTERSIL 3N163
ABSOLUTE MAXIMUM RATINGS1
The hermetically sealed TO-72 package is well suited
for high reliability and harsh environment applications.
@ 25°C (unless otherwise noted)
Maximum Temperatures
Storage Temperature
‐65°C to +200°C
(See Packaging Information).
Operating Junction Temperature
‐55°C to +150°C
Maximum Power Dissipation
3N163 Features:
Very high Input Impedance
Low Capacitance
High Gain
High Gate Breakdown Voltage
Low Threshold Voltage
Continuous Power Dissipation
MAXIMUM CURRENT
Drain Current
MAXIMUM VOLTAGES
Drain to Gate
Drain to Source
Peak Gate to Source2
375mW
50mA
‐40V
‐40V
±125V
3N163 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted)
SYMBOL
CHARACTERISTIC
MIN TYP.
MAX
UNITS
CONDITIONS
IGSSF
Gate Forward Current
‐10 ‐‐
‐‐
pA
VGS = ‐40V, VDS = 0V
TA= +125°C
‐‐
‐‐
‐25
BVDSS
BVSDS
VGS(th)
Drain to Source Breakdown Voltage
Source‐Drain Breakdown Voltage
Gate to Source Threshold Voltage
‐40
‐40
‐2.0
‐‐
‐‐
‐‐
‐‐
‐‐
‐5.0
V
ID = ‐10µA, VGS = 0V
IS = ‐10µA, VGD = 0V, VBD = 0V
VDS = VGS , ID = ‐10µA
‐2.0 ‐‐
‐5.0
VDS = ‐15V, ID = ‐10µA
VGS
Gate Source Voltage
‐3.0 ‐‐
‐6.5
VDS = ‐15V, ID = ‐0.5mA
IDSS Drain Leakage Current “Off” ‐‐ ‐‐ 200
pA
VDS = ‐15V, VGS = 0V
ISDS
Source Drain Current
‐‐ ‐‐ 400
VDS = 15V, VGS = VDB = 0V
rDS(on)
ID(on)
gfs
gos
ClickCiss
Drain to Source “On” Resistance
Drain Current “On”
Forward Transconductance
Output Admittance
Input Capacitance–Output shorted
‐‐
‐5.0
2000
‐‐
‐‐
Crss
Reverse Transfer Capacitance
‐‐
To‐‐ 250
‐‐ ‐30
‐‐ 4000
‐‐ 250
‐‐ 2.5
‐‐ 0.7
BuyΩ VGS = ‐20V, ID = ‐100µA
mA VDS = ‐15V, VGS = ‐10V
µS VDS = ‐15V, ID = ‐10mA , f = 1kHz
pF VDS = ‐15V, ID = ‐10mA , f = 1MHz3
Coss Output Capacitance Input Shorted ‐‐ ‐‐ 3.0
SWITCHING CHARACTERISTICS ‐ TA = 25°C and VBS = 0 unless otherwise noted TIMING WAVEFORMS
SYMBOL
CHARACTERISTIC
MAX UNITS CONDITIONS
td(on)
tr
toff
Turn On Delay Time
Turn On Rise Time
Turn Off Time
12
VDD = ‐15V
24
50
ns RIGD =(o nR) L= = ‐ 110.4mKAΩ 3
SWITCHING TEST CIRCUIT
Micross Components Europe
Note 1 ‐ Absolute maximum ratings are limiting values above which 3N163 serviceability may be impaired.
Note 2 – Device must not be tested at ±125V more than once or longer than 300ms.
Note 3 – For design reference only, not 100% tested
Available Packages:
TO-72 (Bottom View)
3N163 in TO-72
3N163 in bare die.
Tel: +44 1603 788967
Email: [email protected]
Web: http://www.micross.com/distribution
Please contact Micross for full
package and die dimensions
Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed
for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise
under any patent or patent rights of Linear Integrated Systems.
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: [email protected] Web: www.micross.com/distribution.aspx
1 page | ||
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| PDF Descargar | [ Datasheet 3N163.PDF ] | |
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