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Datasheet 2N4416A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2N4416A | Diode, Rectifier |  American Microsemiconductor | diode |
| 2 | 2N4416A | N-Channel JFETs 2N4416/2N4416A/SST4416
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
2N4416 2N4416A SST4416
VGS(off) (V)
−v6 −2.5 to −6
−v6
V(BR)GSS Min (V)
−30 −35 −30
gfs Min (mS)
4.5 4.5 4.5
IDSS Min (mA)
5 5 5
FEATURES
D Excellent High-Frequency Gain: 2N4416/A, Gps 13 dB (typ |  Vishay | data |
| 3 | 2N4416A | SMALL SIGNAL N-CHANNEL J-FET 2N4416A 2N4416A
MECHANICAL DATA Dimensions in mm (inches)
4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178)
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
4 31
2
TO-72 (TO-206AF) PIN 1 - Case PIN 2 - Gate PIN 3 -Drain PIN 4 - Source
12.7 (0.500) min.
5.33 (0.210) 4.32 (0.170)
SMALL SIGNAL N� |  Seme LAB | data |
| 4 | 2N4416A | SILICON SMALL SIGNAL N-CHANNEL JFET SILICON SMALL SIGNAL N-CHANNEL JFET
2N4416/ 2N4416A
• Low Noise, High Gain. • Hermetic 4 Pin TO-72 Package. • Designed For VHF/UHF Amplifiers, Oscillators
And Mixers.
• Screening Options Available.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
2N4416 2N4416A
VDS Drain – |  TT | data |
| 5 | 2N4416A | VHF/UHF AMPLIFIER JFET 2N4416,A
CASE 20-03, STYLE 1
TO-72 (TO-206AF)
JFET VHF/UHF AMPLIFIER
—N-CHANNEL DEPLETION
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage
2N4416 2N4416A
Gate-Source Voltage
Gate Current
@Total Device Dissipation TA = 25°C
Derate above 25°C
Operating and Storage Junction Tempera |  Motorola Semiconductors | amplifier |
2N4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2N40 | N-CHANNEL POWER MOSFET 2N40
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
2A, 400V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N40 is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, stable off–state characteristics and superior switching perfo  Unisonic Technologies mosfet | | |
| 2 | 2N4000 | NPN Transistor OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4000
Datashee  Texas transistor | | |
| 3 | 2N4000 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package 2N4000
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 80V
5.08 (0.200) typ.
I Seme LAB data | | |
| 4 | 2N4000 | Trans GP BJT NPN 80V 1A 3-Pin TO-5 New Jersey Semiconductor data | | |
| 5 | 2N4001 | NPN Transistor OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datasheet
www.semicon-data.com
OEM: Texas Instruments
2N4001
Datashee Texas transistor | | |
| 6 | 2N4001 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 2N4001
Dimensions in mm (inches).
8.51 (0.34) 9.40 (0.37)
7.75 (0.305) 8.51 (0.335)
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
6.10 (0.240) 6.60 (0.260)
12.70 (0.500) min.
0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia.
VCEO = 100V
5.08 (0.200) typ.
Seme LAB data | | |
| 7 | 2N4001 | Trans GP BJT NPN 100V 1A 3-Pin TO-5 New Jersey Semiconductor data | |
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