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PDF APM4904K Data sheet ( Hoja de datos )
| Número de pieza | APM4904K | |
| Descripción | Dual N-Channel Enhancement Mode MOSFET | |
| Fabricantes | ANPEC Electronics | |
| Logotipo |  |
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APM4904K
Dual N-Channel Enhancement Mode MOSFET
Features
Pin Description
• 30V/7A,
R
DS(ON)
=22mΩ
(typ.)
@
V
GS
=
10V
RDS(ON) =26mΩ (typ.) @ VGS = 4.5V
• Super High Dense Cell Design
• Reliable and Rugged
• SOP-8 Package
• Lead Free Available (RoHS Compliant)
Applications
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
D1
(1) (2)
Ordering and Marking Information
Top View of SOP − 8
S1/D2
(5) (6) (7)
G1 (8)
G2
(3)
S2 (4)
N-Channel MOSFET
APM4904
Lead Free Code
Handling Code
Temp. Range
Package Code
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150 °C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
APM4904 K :
APM4904
XXXXX
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
wwwf.oDratMaSShLeectl4aUs.sciofimcation at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Jan., 2006
1
www.anpec.com.tw
1 page  
APM4904K
Typical Characteristics (Cont.)
Output Characteristics
30
V = 4,5,6,7,8,9,10V
GS
25 3.5V
20
15
3V
10
5
2.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain-Source Voltage (V)
Drain-Source On Resistance
40
35
30
V =4.5V
GS
25
V =10V
GS
20
15
10
0 5 10 15 20 25 30
ID - Drain Current (A)
Transfer Characteristics
30
25
20
15
T =125oC
j
10
T =25oC
j
5
T =-55oC
j
0
012345
www.DataSheet4U.coVmGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.4
IDS=250µA
1.2
1.0
0.8
0.6
0.4
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Jan., 2006
5
www.anpec.com.tw
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