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PDF 22N60 Data sheet ( Hoja de datos )
| Número de pieza | 22N60 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | Unisonic Technologies | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 22N60 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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UNISONIC TECHNOLOGIES CO., LTD
22N60
HEXFET POWER MOSFET
Power MOSFET
DESCRIPTION
As the SMPS MOSFET, the UTC 22N60 uses UTC’s
advanced technology to provide excellent RDS(ON), low gate
charge and operation with low gate voltages. This device is
suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) = 240 mΩ
* Ultra Low Gate Charge ( Typical 150 nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 36 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
1
TO-247
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
22N60L-T47-T
22N60G-T47-T
Package
TO-247
Pin Assignment
123
GDS
Packing
Tube
www.DataSheet4U.com
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-216.E
1 page  
22N60
TEST CIRCUITS(Cont.)
D.U.T.
+
-
+
VDS
-
L
Power MOSFET
RG
VGS
Same Type
as D.U.T.
Driver
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
VDD
VGS
(Driver)
ISD
(D.U.T.)
VDS
(D.U.T.)
www.DataSheet4U.com
P.W.
Period
P. W.
D= Period
VGS= 10V
IFM, Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDD
Body Diode
Forward Voltage Drop
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 6
QW-R502-216.E
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 22N60.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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