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RT6105X Datasheet PDF - Advanced Semiconductor

Part Number RT6105X
Description NPN SILICON RF POWER TRANSISTOR
Manufacturers Advanced Semiconductor 
Logo Advanced Semiconductor Logo 

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RT6105X
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI RT6105X is Designed for
Television Band III Applications up
to 225 MHz.
FEATURES:
Common Emitter
PG = 15 dB at 5.0 W/225 MHz
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 4.0 A
VCBO
55 V
VCEO
30 V
VEBO
4.0 V
PDISS
50 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC 3.5 °C/W
PACKAGE STYLE .280 4L STUD
A
45°
D
BS
S
G
D
E
F
C
J
I
G
H
K
#8-32 UNC
DIM
MINIMUM
inches / mm
MAXIMUM
inches / mm
A 1.010 / 25.65
1.055 / 26.80
B .220 / 5.59
.230 /5.84
C .270 / 6.86
.285 / 7.24
D .003 / 0.08
.007 / 0.18
E .117 / 2.97
.137 / 3.48
F .572 / 14.53
G .130 / 3.30
H .245 / 6.22
.255 / 6.48
I .640 / 16.26
J .175 / 4.45
.217 / 5.51
K .275 / 6.99
.285 / 7.24
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 50 mA
BVCER
IC = 20 mA
RBE = 10
BVCBO
IC = 20 mA
BVEBO
IE = 2.0 mA
hFE VCE = 5.0 V
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
30
55
55
4.0
20 120
UNITS
V
V
V
V
---
COB
VCB = 28 V
f = 1.0 MHz
35 pF
PG VCE = 28 V POUT = 5.0 W IC = 1.0 A f = 225 MHz
www.DataSheet4U.cVoCmE = 28 V POUT = 5.0 W IC = 1.0 A f = 225 MHz
IMD1
Vision Carrier = -8 dB ref. Sound Carrier = -7 dB ref.
Sideband Signal = -16 dB ref.
ψ
VCE = 28 V POUT = 5.0 W IC = 1.0 A f = 225 MHz
Load VSWR = 00:1, All Phase Angles
15
-55
No Degradation in
Output Power
dB
dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1



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