2SC1971 Datasheet PDF - Advanced Semiconductor
Part Number | 2SC1971 | |
Description | NPN SILICON RF POWER TRANSISTOR | |
Manufacturers | Advanced Semiconductor | |
Logo | ||
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NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 2SC1971 is Designed for RF
power amplifiers on VHF band mobile
radio applications.
FEATURES INCLUDE:
• Replaces Original 2SC1971 in
Most Applications
• High Gain Reduces Drive
Requirements
• Economical TO-220CE Package
MAXIMUM RATINGS
IC 2.0 A
VCBO
35 V
PDISS
12.5 W @ TC = 25 °C
TSTG
-55 °C to +150 °C
θJC 10 °C/W
PACKAGE STYLE TO-220AB (COMMON EMITTER)
1 = BASE
2 = EMITTER
3 = COLLECTOR TAB = EMITTER
CHARACTERISTICS TC = 25 °C
SYMBOL
TEST CONDITIONS
BVCEO
IC = 50 mA
BVCBO
IC = 10 mA
BVEBO
IE = 5.0 mA
ICBO
VCES = 25 V
IEBO VEB = 3.0 V
hFE VCE = 10 V
IC = 100 mA
www.DCatOaSBheet4U.cVoCmB = 30 V
GPE
η
POUT
VCC = 13.5 V
PIN = 0.6 W
f = 1.0 MHz
f =175 MHz
MINIMUM TYPICAL MAXIMUM
17
35
4.0
500
500
10 50 180
15
10
60 70
6.0 7.0
UNITS
V
V
V
µA
µA
---
pF
dB
%
W
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for 2SC1971 electronic component. |
Information | Total 1 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Product Image and Detail view | 1. RF Power Amplifier - Mitsubishi [ Learn More ] | |
Download | [ 2SC1971.PDF Datasheet ] |
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