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PDF 3VD499650YL Data sheet ( Hoja de datos )
| Número de pieza | 3VD499650YL | |
| Descripción | HIGH VOLTAGE MOSFET CHIPS | |
| Fabricantes | Silan Microelectronics | |
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3VD499650YL
3VD499650YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD499650YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated in
advanced silicon epitaxial planar technology;
¾ Advanced termination scheme to provide enhanced
voltage-blocking capability;
¾ Avalanche Energy Specified;
¾ Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode;
¾ The chips may packaged in TO-220 type and the typical
equivalent product is 12N65;
¾ The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers;
¾ Die size: 5.66mm*4.4mm;
¾ Chip Thickness: 300±20μm;
¾ Top metal: Al, Backside Metal: Ag.
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (TO-220 Package)
Operation Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
TJ
Tstg
Ratings
650
±30
12
180
150
-55～+150
Unit
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Gate-Source Leakage Current
www.DataSShoeeutr4cUe-.Dcormain Diode Forward on
Voltage
Symbol
BVDSS
VTH
IDSS
Test conditions
VGS=0V, ID=250µA
VGS= VDS, ID=250µA
VDS=650V, VGS=0V
RDS(on) VGS=10V, ID=6.0A
IGSS VGS=±30V, VDS=0V
VFSD IS=12A, VGS=0V
Min.
650
2.0
-
Typ.
-
-
-
Max.
-
4.0
1.0
Unit
V
V
µA
- - 0.8 Ω
- - ±100 nA
- - 1.4 V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2008.10.15
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