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PDF NP-SAMC Data sheet ( Hoja de datos )
| Número de pieza | NP-SAMC | |
| Descripción | 50A / Ultra Low Capacitance TSPD | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NP-SAMC Series
Product Preview
50A, Ultra Low Capacitance
TSPD
The NP−SAMC series of Low Capacitance Thyristor Surge
Protection Devices (TSPD) protect sensitive electronic equipment
from transient overvoltage conditions. Due to their ultra low off−state
capacitance (Co), they offer minimal signal distortion for high speed
equipment such as DSL and T1/E1 circuits. The low nominal offstate
capacitance translates into the extremely low differential capacitance
offering superb linearity with applied voltage or frequency.
The NP−SAMC Series helps designers to comply with the various
regulatory standards and recommendations including:
GR−1089−CORE, IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950,
TIA−968−A, FCC Part 68, EN 60950, UL 1950.
Features
• Ultra Low − Micro Capacitance
• Low Leakage (Transparent)
• High Surge Current Capabilities
• Precise Turn on Voltages
• Low Voltage Overshoot
• These are Pb−Free Devices
Typical Applications
• xDSL Central Office and Customer Premise
• T1/E1
• Other Broadband High Speed Data Transmission Equipment
ELECTRICAL CHARACTERISTICS
Device
VDRM
V
V(BO)
V
CO, 2 V,
1 MHz
pF (Max)
CO, 50 V,
1 MHz
pF (Max)
NP0640SAMCT3G
NP0720SAMCT3G
NP0900SAMCT3G
NP1100SAMCT3G
NP1300SAMCT3G
NP1500SAMCT3G
NP1800SAMCT3G
NP2100SAMCT3G
NP2300SAMCT3G
NP2600SAMCT3G
NP3100SAMCT3G
www.DatNaSPh3e5e0t04SUA.McoCmT3G
"58
"65
"75
"90
"120
"140
"170
"180
"190
"220
"275
"320
"77
"88
"98
"130
"160
"180
"220
"240
"260
"300
"350
"400
18
18
18
18
18
18
18
18
18
18
18
18
8
8
8
8
8
8
8
8
8
8
8
8
G in part number indicates RoHS compliance
Other protection voltages are available upon request
Symmetrical Protection − Values the same in both negative and positive
excursions
(See V−I Curve on page 3)
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
ULTRA LOW CAPACITANCE
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
50A, 10x1000ms SURGE
TR
SMB
JEDEC DO−214AA
CASE 403C
MARKING DIAGRAM
AYWW
xxxAMG
G
A = Assembly Location
Y = Year
WW = Work Week
xxx = Specific Device Code
(NPxxx0SAMC)
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NPxxx0SAMCT3G
SMB
(Pb−Free)
2500 Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2009
May, 2009 − Rev. P2
1
Publication Order Number:
NP0640SA/D
1 page  
NP−SAMC Series
and shorts the transient to ground, safely protecting the
circuit.
+ I(OP)
V(OP) TSPD
−
+
Protected
Equipment
−
•TSPD looks like an open
•Circuit operates normally
Normal Circuit Operation
+ I(Fault)
V(Fault) TSPD
−
+
I(Fault) Protected
E−quipment
•Fault voltage greater than Vbo occurs
•TSPD shorts fault to ground
•After short duration events the O/V
switches back to an open condition
•Worst case (Fail/Safe)
•O/V permanent short
Operation during a Fault
•Equipment protected
Figure 4. Normal and Fault Conditions
The electrical characteristics of the TSPD help the user to
define the protection threshold for the circuit. During the
open circuit condition the device must remain transparent;
this is defined by the IDRM. The IDRM should be as low as
possible. The typical value is less than 5 mA.
The circuit operating voltage and protection voltage must
be understood and considered during circuit design. The
V(BO) is the guaranteed maximum voltage that the protected
circuit will see, this is also known as the protection voltage.
The VDRM is the guaranteed maximum voltage that will
keep the TSPD in its normal open circuit state. The TSPD
V(BO) is typically a 20−30% higher than the VDRM. Based
on these characteristics it is critical to choose devices which
have a VDRM higher than the normal circuit operating
voltage, and a V(BO) which is less than the failure threshold
of the protected equipment circuit. A low on−state voltage
Vt allows the TSPD to conduct large amounts of surge
current (500 A) in a small package size.
Once a transient surge has passed and the operating
voltage and currents have dropped to their normal level the
TSPD changes back to its open circuit state.
Transient Surge
TSPD’s are useful in helping designers meet safety and
regulatory standards in Telecom equipment including
GR−1089−CORE, ITU−K.20, ITU−K.21, ITU−K.45, FCC
Part 68, UL1950, and EN 60950.
ON Semiconductor offers a full range of these products in
the NP series product line.
DEVICE SELECTION
When selecting a TSPD use the following key selection
parameters.
Off−State Voltage VDRM
Choose a TSPD that has an Off−State Voltage greater than
the normal system operating voltage. The protector should
not operate under these conditions:
Example:
Vbat = 48 Vmax
Vring = 150 Vrms = 150*1.414 = 212 V peak
VDRM should be greater than the peak value of these two
components:
VDRM > 212 + 48 = 260 VDRM
Breakover Voltage V(BO)
Verify that the TSPD Breakover Voltage is a value less
than the peak voltage rating of the circuit it is protecting.
Example: Relay breakdown voltage, SLIC maximum
voltage, or coupling capacitor maximum rated voltage.
Peak Pulse Current Ipps
Choose a Peak Pulse current value which will exceed the
anticipated surge currents in testing. In some cases the 100 A
“C” series device may be needed when little or no series
resistance is used. When a series current limiter is used in the
circuit a lower current level of “A” or “B” may be used. To
determine the peak current divide the maximum surge
current by the series resistance.
Hold Current (IH)
The Hold Current must be greater than the maximum
system generated current. If it is not then the TSPD will
remain in a shorted condition, even after a transient event
has passed.
Equipment Failure Threshold
TSPD Protection Voltage
Upper Limit
www.DataSTShPeDeTtra4nUspa.rcenot m TSPD Protection
(open)
(short)
TSPD Transparent
(open)
Normal System
Operating Voltage
Time
Figure 5. Protection During a Transient Surge
http://onsemi.com
5
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