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What is DMN2400UFB4?

This electronic component, produced by the manufacturer "Diodes", performs the same function as "N-CHANNEL ENHANCEMENT MODE MOSFET".


DMN2400UFB4 Datasheet PDF - Diodes

Part Number DMN2400UFB4
Description N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturers Diodes 
Logo Diodes Logo 


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Total 6 Pages



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No Preview Available ! DMN2400UFB4 datasheet, circuit

Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
UItra-Small Surface Mount Package
Ultra-Low Package Profile, 0.4mm Maximum Package Height
Lead Free By Design/RoHS Compliant (Note 1)
ESD Protected up to 1.5kV
"Green" Device (Note 2)
Qualified to AEC-Q101 standards for High Reliability
DMN2400UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: DFN1006H4-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: Collector Dot
Terminals: Finish NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
ESD PROTECTED TO 1.5kV
DFN1006H4-3
BOTTOM VIEW
S
D
G
TOP VIEW
Package Pin Configuration
Drain
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
Ordering Information (Note 3)
Notes:
Part Number
DMN2400UFB4-7
Case
DFN1006H4-3
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
3000/Tape & Reel
Marking Information
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NC
NC = Product Type Marking Code
Dot Denotes Drain Side
DMN2400UFB4
Document number: DS32025 Rev. 3 - 2
1 of 6
www.diodes.com
October 2010
© Diodes Incorporated

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DMN2400UFB4 equivalent
DMN2400UFB4
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01 D = 0.01
D = 0.005
D = Single Pulse
0.001
0.00001 0.0001
0.001
D = 0.9
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 13 Transient Thermal Response
RθJA(t) = r(t) * RθJA
RθJA = 253°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
10 100 1,000
Package Outline Dimensions
A
A1
E b2
D
L2 L3 L1
b1
e
DFN1006H4-3
Dim Min Max Typ
A 0.40
A1 0 0.05 0.02
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
e ⎯ ⎯ 0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3 ⎯ ⎯ 0.40
All Dimensions in mm
Suggested Pad Layout
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X1
X G2
C
G1
Y
Z
Dimensions
Z
G1
G2
X
X1
Y
C
Value (in mm)
1.1
0.3
0.2
0.7
0.25
0.4
0.7
DMN2400UFB4
Document number: DS32025 Rev. 3 - 2
5 of 6
www.diodes.com
October 2010
© Diodes Incorporated


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for DMN2400UFB4 electronic component.


Information Total 6 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
DMN2400UFBThe function is N-CHANNEL ENHANCEMENT MODE MOSFET. DiodesDiodes
DMN2400UFB4The function is N-CHANNEL ENHANCEMENT MODE MOSFET. DiodesDiodes

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