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PDF DA22F21 Data sheet ( Hoja de datos )
| Número de pieza | DA22F21 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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This product complies with the RoHS Directive (EU 2002/95/EC).
DA22F21
Silicon epitaxial planar type
For high speed switching circuits
Features
Short reverse recovery time trr
Low impedance by clip bonding package
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Repetitive peak reverse voltage
VRRM
200
Non-repetitive peak reverse surge voltage
VRSM
200
Forward current
IF 1.0
Non-repetitive peak forward surge current * IFSM 15
Junction temperature
Tj –40 to +150
Storage temperature
Tstg –40 to +150
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
V
A
A
°C
°C
Package
Code
Mini2-F4-B
Pin Name
1: Cathode
2: Anode
Marking Symbol: 3Q
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF IF = 1.0 A
0.98 V
Reverse current
IRRM VRRM = 200 V
10 mA
Terminal capacitance
Ct VR = 0 V, f = 1 MHz
60 pF
Reverse recovery time *
trr IF = 0.5 A, IR = 1 A, Irr = 0.25 × IR
35 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
50 Ω
50 Ω
trr
D.U.T.
IF
www.DataSheet4U.com
5.5 Ω
0.25 × IR
IR
Publication date: June 2010
ZKJ00030CED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DA22F21.PDF ] | |
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