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What is EIA7785-2?

This electronic component, produced by the manufacturer "Excelics Semiconductor", performs the same function as "7.70-8.50GHz 2-Watt Internally Matched Power FET".


EIA7785-2 Datasheet PDF - Excelics Semiconductor

Part Number EIA7785-2
Description 7.70-8.50GHz 2-Watt Internally Matched Power FET
Manufacturers Excelics Semiconductor 
Logo Excelics Semiconductor Logo 


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UPDATED 11/16/2006
EIA7785-2
7.70-8.50GHz 2-Watt Internally Matched Power FET
FEATURES
7.70– 8.50GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+34 dBm Output Power at 1dB Compression
12.5 dB Power Gain at 1dB Compression
33% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
.060 MIN.
.650±.008 .512
GATE
Excelics
EIA7785-2
YYWW
.060 MIN.
DRAIN
.022
.319
SN
.094
.382
.045
.004 .070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 7.70-8.50GHz
VDS = 8V, IDSQ 800mA
Gain at 1dB Compression
f = 7.70-8.50GHz
VDS = 8V, IDSQ 800mA
Gain Flatness
f = 7.70-8.50GHz
VDS = 8V, IDSQ 800mA
Power Added Efficiency at 1dB Compression
VDS = 8V, IDSQ 800mA
f = 7.70-8.50GHz
Id1dB Drain Current at 1dB Compression f = 7.70-8.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
VDS = 3 V, IDS = 14 mA
Note: 1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
MIN
33.0
11.5
TYP
34.0
12.5
33
900
1400
-1.0
10
MAX
±0.6
1100
1800
-2.5
11
UNITS
dBm
dB
dB
%
mA
mA
V
oC/W
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Igsf Forward Gate Current
12
-5
21.6mA
Igsr Reverse Gate Current
-3.6mA
Pin Input Power
33dBm
Tch Channel Temperature
175 oC
Tstg
Storage Temperature
-65 to +175 oC
www.DataSheetP4Ut .com
Total Power Dissipation
13W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
8V
-3V
7.2mA
-1.2mA
@ 3dB Compression
175 oC
-65 to +175 oC
13W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised November 2006


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EIA7785-2 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
EIA7785-2The function is 7.70-8.50GHz 2-Watt Internally Matched Power FET. Excelics SemiconductorExcelics Semiconductor
EIA7785-6The function is 7.70-8.50GHz 6-Watt Internally Matched Power FET. Excelics SemiconductorExcelics Semiconductor

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