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PDF APT20GN60KG Data sheet ( Hoja de datos )
| Número de pieza | APT20GN60KG | |
| Descripción | High Speed PT IGBT | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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TYPICAL PERFORMANCE CURVES
AP6T0200GVN60K(G)
APT20GN60K
APT20GN60KG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
TO-220
• 600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 6µs Short Circuit Capability
• 175°C Rated
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
C
G
E
MAXIMUM RATINGS
Symbol Parameter
All Ratings: TC = 25°C unless otherwise specified.
APT20GN60K(G)
UNIT
VCES
VGE
I C1
I C2
I CM
SSOA
PD
TJ,TSTG
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ TC = 25°C
Continuous Collector Current @ TC = 110°C
Pulsed Collector Current 1 @ TC = 175°C
Switching Safe Operating Area @ TJ = 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
600
±30
40
24
60
60A @ 600V
136
-55 to 175
300
Volts
Amps
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
V(BR)CES
VGE(TH)
VCE(ON)
I CES
I GES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 2mA)
Gate Threshold Voltage (VCE = VGE, I C = 290µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, IC = 20A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) 2
Gate-Emitter Leakage Current (VGE = ±20V)
MIN TYP MAX Units
600
5.0 5.8 6.5
Volts
1.1 1.5 1.9
1.7
25
1000
µA
300 nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
www.DataSheet.in
1 page  
TYPICAL PERFORMANCE CURVES
2,000
1,000
Cies
500
100
50 Coes
Cres
10
0 10 20 30 40 50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
APT20GN60K(G)
70
60
50
40
30
20
10
0
0 100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
1.20
1.00
D = 0.9
0.80
0.7
0.60
0.40
0.20
0
10-5
0.5
Note:
0.3
0.1
0.05
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
Junction
temp. (°C)
RC MODEL
0.451
0.00078
Power
(watts)
0.324
0.00288
Case temperature. (°C)
0.323
0.0501
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
140
100
50
F
max
=
min
(fmax,
f
max2)
0.05
fmax1 = t d(on) + tr + td(off) + tf
TJ = 125°C
TC = 75°C
10
D = 50 %
VCE = 400V
7 RG = 4.3Ω
5 10
15 20
25
fmax2 =
Pdiss - P cond
E on2 + E off
Pdiss =
TJ - T C
R θJC
30
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
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