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PDF G40N60A4 Data sheet ( Hoja de datos )
| Número de pieza | G40N60A4 | |
| Descripción | HGTG40N60A4 | |
| Fabricantes | Fairchild Semiconductor | |
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Data Sheet
HGTG40N60A4
August 2003
File Number
600V, SMPS Series N-Channel IGBT
The HGTG40N60A4 is a MOS gated high voltage switching
device combining the best features of a MOSFET and a
bipolar transistor. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor. The much lower on-state voltage drop
varies only moderately between 25oC and 150oC. This IGBT
is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses
are essential. This device has been optimized for high
frequency switch mode power supplies.
Formerly Developmental Type TA49347.
Ordering Information
PART NUMBER
PACKAGE
BRAND
HGTG40N60A4
TO-247
40N60A4
NOTE: When ordering, use the entire part number.
Symbol
C
Features
• 100kHz Operation At 390V, 40A
• 200kHz Operation At 390V, 20A
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . .55ns at TJ = 125o
• Low Conduction Loss
Packaging
JEDEC STYLE TO-247
E
C
G
COLLECTOR
(BACK METAL)
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
©2003 Fairchild Semiconductor Corporation
www.DataSheet.in
HGTG40N60A4 Rev. B2
1 page  
HGTG40N60A4
Typical Performance Curves Unless Otherwise Specified (Continued)
42
RG = 2.2Ω, L = 200µH, VCE = 390V
40
38 TJ = 25oC, TJ = 125oC, VGE = 15V
36
34
32
30
28
26
24
22
0
TJ = 25oC, TJ = 125oC, VGE = 15V
10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
80
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
120 RG = 2.2Ω, L = 200µH, VCE = 390V
100 TJ = 125oC, TJ = 25oC, VGE = 12V
80
60
40
20
0 TJ = 25oC, TJ = 125oC, VGE = 15V
0 10 20 30 40 50 60 70 80
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
190 RG = 2.2Ω, L = 200µH, VCE = 390V
180
170
VGE = 12V, VGE = 15V, TJ = 125oC
160
150
VGE = 12V OR 15V, TJ = 25oC
140
130
0
10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
80
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
70
RG = 2.2Ω, L = 200µH, VCE = 390V
65
60 TJ = 125oC, VGE = 12V OR 15V
55
50
45
40 TJ = 25oC, VGE = 12V OR 15V
35
30
0
10 20 30 40 50 60 70
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
80
400
DUTY CYCLE < 0.5%, VCE = 10V
350 PULSE DURATION = 250µs
300
250
200
150
100
50
0
6
TJ = -55oC
TJ = 25oC
TJ = 125oC
78
9 10
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 13. TRANSFER CHARACTERISTIC
11
©2003 Fairchild Semiconductor Corporation
www.DataSheet.in
16 IG(REF) = 1mA, RL = 7.5Ω, TC = 25oC
14
12 VCE = 600V
10
VCE = 400V
8
6 VCE = 200V
4
2
0
0 50 100 150 200 250 300 350 400
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
HGTG40N60A4 Rev. B2
5 Page | ||
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| PDF Descargar | [ Datasheet G40N60A4.PDF ] | |
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