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Datasheet 4AM17 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 4AM17 | Silicon N/P-Channel/P-Channel Power MOS FET Array 4AM17
Silicon N/P Channel MOS FET High Speed Power Switching
ADE-208-729 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A • 4 V gate drive devices. • High density moun |  Hitachi Semiconductor | data |
4AM Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 4AM11 | Silicon N-Channel/P-Channel Power MOS FET Array 4AM11
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A • • • • • Capable of 4 V gate drive Low drive c Hitachi Semiconductor data | | |
| 2 | 4AM13 | Silicon N-Channel/P-Channel Power MOS FET Array 4AM13
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance N-channel: RDS(on) ≤ 0.4 Ω, VGS = 10 V, ID = 1.5 A P-channel: RDS(on) ≤ 0.45 Ω, VGS = –10 V, ID = –1.5 A • • • • • Capable of 4 V gate drive Low drive c Hitachi Semiconductor data | | |
| 3 | 4AM15 | Silicon N-Channel/P-Channel Power MOS FET Array 4AM15
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance N Channel: RDS(on) ≤ 0.5 Ω, VGS = 10 V, ID = 2 A P Channel: RDS(on) ≤ 0.9 Ω, VGS = –10 V, ID = –2 A • • • • Low drive current High speed switching High de Hitachi Semiconductor data | | |
| 4 | 4AM16 | Silicon N-Channel/P-Channel Power MOS FET Array 4AM16
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance N Channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, I D = 4 A P Channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, I D = –4 A • High speed switching • High density mounting • Suit Hitachi Semiconductor data | | |
| 5 | 4AM17 | Silicon N/P-Channel/P-Channel Power MOS FET Array 4AM17
Silicon N/P Channel MOS FET High Speed Power Switching
ADE-208-729 (Z) 1st. Edition February 1999 Features
• Low on-resistance N Channel: R DS(on) ≤0.17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –4 A • 4 V gate drive devices. • High density moun Hitachi Semiconductor data | |
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