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PDF BGA2800 Data sheet ( Hoja de datos )
| Número de pieza | BGA2800 | |
| Descripción | MMIC Wideband Amplifier | |
| Fabricantes | NXP Semiconductors | |
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BGA2800
MMIC wideband amplifier
Rev. 1 — 3 August 2010
Product data sheet
1. Product profile
1.1 General description
Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 plastic SMD package.
1.2 Features and benefits
Internally matched to 50 Ω
A gain of 20 dB at 250 MHz increasing to 20.6 dB at 2150 MHz
Output power at 1 dB gain compression = −1 dBm
Supply current = 10.5 mA at a supply voltage of 3.3 V
Reverse isolation > 30 dB up to 2 GHz
Good linearity with low second order and third order products
Noise figure = 4 dB at 950 MHz
Unconditionally stable (K > 1)
1.3 Applications
LNB IF amplifiers
General purpose low noise wideband amplifier for frequencies between
DC and 2.2 GHz
2. Pinning information
Table 1.
Pin
1
2, 5
3
4
6
Pinning
Description
VCC
GND2
RF_OUT
GND1
RF_IN
Simplified outline Graphic symbol
654
1
63
123
4 2, 5
sym052
1 page  
NXP Semiconductors
8.2 Graphs
BGA2800
MMIC wideband amplifier
135° +0.5
90°
+1
+ 0.2
0
180°
0.2
− 0.2
0.5
(3)
1
(2)
(1)
2
+2 45°
+5
5 10
0°
−5
1.0
0.8
0.6
0.4
0.2
0
−135° −0.5
−1
− 90°
−2
− 45°
001aam232
Tamb = 25 °C; ICC = 10.5 mA; VCC = 3.3 V; Z0 = 50 Ω.
(1) f = 250 MHz
(2) f = 950 MHz
(3) f = 2150 MHz
Fig 4. Input reflection coefficient (S11); typical values
1.0
BGA2800
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 August 2010
© NXP B.V. 2010. All rights reserved.
5 of 18
5 Page 
NXP Semiconductors
BGA2800
MMIC wideband amplifier
Table 11. Saturated output power over temperature and supply voltages
Typical values.
Symbol Parameter
Conditions
Tamb (°C)
−40 25
PL(sat)
saturated output power
f = 250 MHz
VCC = 3.0 V
−1 −1
VCC = 3.3 V
11
VCC = 3.6 V
22
f = 950 MHz
VCC = 3.0 V
−1 −1
VCC = 3.3 V
21
VCC = 3.6 V
f = 2150 MHz
32
VCC = 3.0 V
−1 −1
VCC = 3.3 V
10
VCC = 3.6 V
10
85
−1
1
2
−1
1
2
−3
−2
−1
Unit
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Table 12. Second-order intermodulation distance over temperature and supply voltages
Typical values.
Symbol Parameter
Conditions
Tamb (°C) Unit
−40 25 85
ΔIM2
second-order intermodulation distance
f1 = 250 MHz;
f2 = 251 MHz;
Pdrive = −36 dBm
VCC = 3.0 V
40 51 49 dBc
VCC = 3.3 V
52 53 46 dBc
VCC = 3.6 V
f1 = 950 MHz;
f2 = 951 MHz;
Pdrive = −36 dBm
58 50 45 dBc
VCC = 3.0 V
38 47 52 dBc
VCC = 3.3 V
48 55 46 dBc
VCC = 3.6 V
55 51 44 dBc
BGA2800
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 3 August 2010
© NXP B.V. 2010. All rights reserved.
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