AUIRF7675M2TR1 Datasheet PDF - International Rectifier
Part Number | AUIRF7675M2TR1 | |
Description | Automotive Grade Single N-Channel HEXFET | |
Manufacturers | International Rectifier | |
Logo | ||
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AUTOMOTIVE GRADE
PD -97552
AUIRF7675M2TR
AUIRF7675M2TR1
• Advanced Process Technology
• Optimized for Class D Audio Amplifier Applications
• Low Rds(on) for Improved Efficiency
• Low Qg for Better THD and Improved Efficiency
• Low Qrr for Better THD and Lower EMI
• Low Parasitic Inductance for Reduced Ringing and Lower EMI
• Delivers up to 250W per Channel into 4Ω with No Heatsink
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and Reliability
• Lead free, RoHS and Halogen free
DirectFET Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
150V
47m:
56m:
RG (typical)
1.2:
Qg (typical)
21nC
S
D
G
S
D
Applicable DirectFET Outline and Substrate Outline
M2 DirectFET ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7675M2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compat-
ible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET
package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D
audio amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic
inductance and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the
voltage ringing that accompanies current transients.
These features combine to make this MOSFET a highly desirable component in Automotive Class D audio amplifier systems.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
TP
TJ
TSTG
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
fPulsed Drain Current
fPower Dissipation
ePower Dissipation
dSingle Pulse Avalanche Energy (Thermally Limited)
gSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
Repetitive Avalanche Energy
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
150
± 20
18
13
4.4
90
72
45
2.7
59
170
See Fig.18a, 18b, 15, 16
270
-55 to + 175
V
A
W
mJ
A
mJ
°C
Thermal Resistance
RθJA
RθJA
RθJA
RθJ-Can
RθJ-PCB
Parameter
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Junction-to-PCB Mounted
flLinear Derating Factor
Typ.
–––
12.5
20
–––
1.4
Max.
60
–––
–––
3.3
–––
0.3
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
8/16/10
|
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DataSheet.in
AUIRF7675M2TR/TR1
5.5 100
TJ = -40°C
TJ = 25°C
TJ = 175°C
4.5
10
3.5 ID = 100μA
ID = 250μA
ID = 1.0mA
2.5 ID = 1.0A
1
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 7. Typical Threshold Voltage vs. Junction Temperature
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
50 100000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
40
TJ = 25°C
10000
Crss = C gd
Coss = Cds + Cgd
30 TJ = 175°C
20
10
0
0
VDS = 10V
380μs PULSE WIDTH
4 8 12 16 20
ID,Drain-to-Source Current (A)
24
Fig 9. Typical Forward Transconductance Vs. Drain Current
14
ID= 11A
12
10
VDS= 120V
VDS= 75V
VDS= 30V
8
1000
100
Ciss
Coss
Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
20
16
12
68
4
4
2
0
0 4 8 12 16 20 24 28
QG, Total Gate Charge (nC)
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com
Fig 12. Maximum Drain Current vs. Case Temperature
5
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