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What is AUIRF7669L2TR?

This electronic component, produced by the manufacturer "International Rectifier", performs the same function as "Automotive DirectFET Power MOSFET".


AUIRF7669L2TR Datasheet PDF - International Rectifier

Part Number AUIRF7669L2TR
Description Automotive DirectFET Power MOSFET
Manufacturers International Rectifier 
Logo International Rectifier Logo 


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DataSheet.in
AUTOMOTIVE GRADE
PD - 97536
AUIRF7669L2TR
AUIRF7669L2TR1
Advanced Process Technology
Optimized for Automotive Motor Drive, DC-DC and
other Heavy Load Applications
Exceptionally Small Footprint and Low Profile
High Power Density
Low Parasitic Parameters
Dual Sided Cooling
175°C Operating Temperature
Repetitive Avalanche Capability for Robustness and
Reliability
Lead free, RoHS and Halogen free
Automotive DirectFET™ Power MOSFET ‚
V(BR)DSS
100V
RDS(on) typ.
3.5m
max.
4.4m
ID (Silicon Limited)
114A
Qg 81nC
Applicable DirectFET Outline and Substrate Outline 
L8 DirectFET™ ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7669L2TR(1) combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM
packaging to achieve the lowest on-state resistance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,
infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET® Power MOSFET is designed for applications where efficiency and power density are essential. The advanced DirectFET
packaging platform coupled with the latest silicon technology allows the AUIRF7669L2TR(1) to offer substantial system level savings and
performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications on ICE, HEV and EV plat-
forms. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of
this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this
MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS (tested)
IAR
EAR
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
fPulsed Drain Current
fPower Dissipation
ePower Dissipation
hSingle Pulse Avalanche Energy (Thermally Limited)
gSingle Pulse Avalanche Energy Tested Value
ÙAvalanche Current
™Repetitive Avalanche Energy
TP Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJCan
RθJ-PCB
Parameter
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Junction-to-PCB Mounted
fLinear Derating Factor
Max.
100
± 20
114
81
19
375
460
100
3.3
260
850
See Fig.12a, 12b, 15, 16
260
-55 to + 175
Typ.
–––
12.5
20
–––
–––
Max.
45
–––
–––
1.2
0.5
0.83
Units
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
07/13/2010

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AUIRF7669L2TR equivalent
DataSheet.in
AUIRF7669L2TR/TR1
6.0 1000
VGS = 0V
5.0 TJ = -40°C
4.0
100
TJ = 25°C
TJ = 175°C
3.0
ID = 250µA
2.0
ID = 1.0mA
ID = 1.0A
10
1.0
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig 7. Typical Threshold Voltage vs.
Junction Temperature
250
TJ = 25°C
200
150
TJ = 175°C
100
50 VDS = 10V
20µs PULSE WIDTH
0
0 25 50 75 100 125 150 175 200
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Transconductance vs. Drain Current
1.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
100000
10000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
1000
Crss
100
1
10 100
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
14.0
ID= 68A
12.0
VDS= 80V
10.0
VDS= 50V
VDS= 20V
8.0
6.0
4.0
2.0
0.0
0
20 40 60 80 100
QG, Total Gate Charge (nC)
120
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com
120
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 12. Maximum Drain Current vs. Case Temperature
5


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