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PDF AUIRF7647S2TR1 Data sheet ( Hoja de datos )
| Número de pieza | AUIRF7647S2TR1 | |
| Descripción | DirectFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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DataSheet.in
AUTOMOTIVE GRADE
PD - 97537
AUIRF7647S2TR
AUIRF7647S2TR1
• Advanced Process Technology
• Optimized for Class D Audio Amplifier Applications
• Low Rds(on) for Improved Efficiency
• Low Qg for Better THD and Improved Efficiency
• Low Qrr for Better THD and Lower EMI
• Low Parasitic Inductance for Reduced Ringing and Lower EMI
• Delivers up to 100W per Channel into 8Ω with No Heatsink
• Dual Sided Cooling
• 175°C Operating Temperature
• Repetitive Avalanche Capability for Robustness and Reliability
• Lead free, RoHS and Halogen free
DirectFET Power MOSFET
V(BR)DSS
RDS(on) typ.
max.
RG (typical)
Qg (typical)
100V
26mΩ
31mΩ
1.6Ω
14nC
S
DG
D
S
Applicable DirectFET Outline and Substrate Outline
SC DirectFET ISOMETRIC
SB SC
M2 M4
L4 L6 L8
Description
The AUIRF7647S2TR/TR1 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
packaging platform to produce a best in class part for Automotive Class D audio amplifier applications. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in automotive power systems.
This HEXFET Power MOSFET optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key Class D audio
amplifier performance factors such as efficiency, THD and EMI. Moreover the DirectFET packaging platform offers low parasitic inductance
and resistance when compared to conventional wire bonded SOIC packages which improves EMI performance by reducing the voltage
ringing that accompanies current transients. These features combine to make this MOSFET a highly desirable component in Automotive
Class D audio amplifier systems.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
IDM
PD @TC = 25°C
PD @TA = 25°C
EAS
EAS(tested)
IAR
EAR
TP
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
fContinuous Drain Current, VGS @ 10V (Silicon Limited)
eContinuous Drain Current, VGS @ 10V (Silicon Limited)
fPulsed Drain Current
fPower Dissipation
ePower Dissipation
hSingle Pulse Avalanche Energy (Thermally Limited)
hSingle Pulse Avalanche Energy (Tested Value)
ÃgAvalanche Current
gRepetitive Avalanche Energy
Peak Soldering Temperature
TJ Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJ-Can
RθJ-PCB
Parameter
eJunction-to-Ambient
jJunction-to-Ambient
kJunction-to-Ambient
flJunction-to-Can
Junction-to-PCB Mounted
fLinear Derating Factor
Max.
100
± 20
24
17
5.9
95
41
2.5
45
67
See Fig. 18a,18b,16,17
270
-55 to + 175
Typ.
Max.
––– 60
12.5 –––
20 –––
––– 3.7
1.4 –––
0.27
Units
V
A
W
mJ
A
mJ
°C
Units
°C/W
W/°C
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
07/13/2010
1 page  
DataSheet.in
AUIRF7647S2TR/TR1
6.0
5.5
5.0
4.5
4.0
3.5 ID = 50µA
3.0 ID = 250µA
2.5
ID = 1.0mA
ID = 1.0A
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 7. Typical Threshold Voltage vs. Junction Temperature
1000
100 TJ = -40°C
TJ = 25°C
TJ = 175°C
10
1
VGS = 0V
0.1
0.2 0.4 0.6 0.8 1.0 1.2
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
40
TJ = 25°C
30
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
20 Coss
TJ = 175°C
10
VDS = 5.0V
380µs PULSE WIDTH
0
0 5 10 15 20 25 30
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Transconductance vs. Drain Current
14.0
ID= 14A
12.0 VDS= 80V
10.0
VDS= 50V
VDS= 20V
8.0
6.0
4.0
2.0
0.0
0 2 4 6 8 10 12 14 16 18 20
QG, Total Gate Charge (nC)
Fig.11 Typical Gate Charge vs.Gate-to-Source Voltage
www.irf.com
100 Crss
10
1
10
VDS, Drain-to-Source Voltage (V)
100
Fig 10. Typical Capacitance vs.Drain-to-Source Voltage
25
20
15
10
5
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 12. Maximum Drain Current vs. Case Temperature
5
5 Page 
DataSheet.in
AUIRF7647S2TR/TR1
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the
right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time
and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow automotive industry
and / or customer specific requirements with regards to product discontinuance and process change notification. All products are
sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard
warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except
where mandated by government requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using IR components. To minimize the risks with customer products and applications, customers should provide ad-
equate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is
an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties
may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body,
or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could
create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or
unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
IR was negligent regarding the design or manufacture of the product.
IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are
specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as military-grade meet military
specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is
solely at the Buyer’s risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection
with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are
designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers
acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any
failure to meet such requirements
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245
Tel: (310) 252-7105
www.irf.com
11
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