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PDF PHE13003C Data sheet ( Hoja de datos )
| Número de pieza | PHE13003C | |
| Descripción | NPN power transistor | |
| Fabricantes | NXP Semiconductors | |
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PHE13003C
NPN power transistor
7 October 2013
Product data sheet
1. General description
High voltage, high speed, planar passivated NPN power switching transistor in a SOT54
(TO-92) plastic package.
2. Features and benefits
• Fast switching
• High typical DC current gain
• High voltage capability of 700 V
• Very low switching and conduction losses
3. Applications
• Compact fluorescent lamps (CFL)
• Low power electronic lighting ballasts
• Off-line self-oscillating power supplies (SOPS) for battery charging
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
IC
collector current
DC
Ptot total power dissipation Tlead ≤ 25 °C; Fig. 1
VCESM
collector-emitter peak VBE = 0 V
voltage
Static characteristics
hFE
DC current gain
IC = 0.5 A; VCE = 2 V; Tlead = 25 °C
Min Typ Max Unit
- - 1.5 A
- - 2.1 W
- - 700 V
8 17 25
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1 page  
NXP Semiconductors
PHE13003C
NPN power transistor
50 V
100 Ω to 200 Ω
horizontal
oscilloscope
vertical
6V
30 Hz to 60 Hz
300 Ω
1Ω
001aab987
Fig. 3. Test circuit for collector-emitter sustaining
voltage
VCC
RL
VIM RB
0 DUT
tp
T
001aab989
Fig. 5. Test circuit for resistive load switching
IC
(mA)
250
100
10
0
min VCE (V)
VCEOsus
001aab988
Fig. 4. Oscilloscope display for collector-emitter
sustaining voltage test waveform
IC
90 %
ICon
90 %
IB
ton
ts
toff
IBon
10 %
tf
t
10 %
tr ≤ 30 ns
- IBoff
t
001aab990
Fig. 6. Switching times waveforms for resistive load
PHE13003C
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 October 2013
© NXP N.V. 2013. All rights reserved
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