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What is F9232?

This electronic component, produced by the manufacturer "Intersil Corporation", performs the same function as "IRF9232".


F9232 Datasheet PDF - Intersil Corporation

Part Number F9232
Description IRF9232
Manufacturers Intersil Corporation 
Logo Intersil Corporation Logo 


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Semiconductor
January 1998
IRF9230, IRF9231,www.DataSheet4U.com
IRF9232, IRF9233
-5.5A and -6.5A, -150V and -200V, 0.8 and 1.2 Ohm,
P-Channel Power MOSFETs
Features
• -5.5A and -6.5A, -150V and -200V
• rDS(ON) = 0.8and 1.2
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF9230
TO-204AA
IRF9230
IRF9231
TO-204AA
IRF9231
IRF9232
TO-204AA
IRF9232
IRF9233
TO-204AA
IRF9233
NOTE: When ordering, use the entire part number.
Description
These devices are P-Channel enhancement mode silicon
gate power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly Developmental type TA17512.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
6-1
File Number 2226.1

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F9232 equivalent
IRF9230, IRF9231, IRF9232, IRF9233
Typical Performance Curves Unless Otherwise Specified (Continued)
www.DataSheet4U.com
-15
80µsPULSE TEST
-12
-9
-6
VGS = -10V
VGS = -9V
VGS = -8V
VGS = -7V
VGS = -6V
-15
80µs PULSE TEST
VDS I D(ON) x rDS(ON) MAX
-12
TJ = 125oC
-9 TJ = 25oC
TJ = -55oC
-6
-3 VGS = -5V
VGS = -4V
0
0 -2 -4 -6 -8 -10
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
-3
0
0 -2 -4 -6 -8
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 7. TRANSFER CHARACTERISTICS
-10
2.0
2.0µs PULSE TEST
1.6
2.5
VGS = -10V, ID = -2.0A
2.0
1.2 1.5
VGS = - 10V
0.8 1.0
VGS = - 20V
0.4 0.5
0
0 -5 -10 -15 -20 -25
ID, DRAIN CURRENT (A)
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
1.25
ID = 250µA
1.15
1.05
0
-40 0 40 80 120 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
2000
1600
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS CDS + CGD
1200
0.95
800 CISS
0.85
0.75
-40
0 40 80 120
TJ, JUNCTION TEMPERATURE (oC)
160
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
400
CRSS
00
COSS
-10 -20 -30 -40
VDS, DRAIN TO SOURCE VOLTAGE (V)
-50
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
6-5


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Featured Datasheets

Part NumberDescriptionMFRS
F9232The function is IRF9232. Intersil CorporationIntersil Corporation
F9232The function is IRF9232. Intersil CorporationIntersil Corporation

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