H25R1202 Datasheet PDF - Infineon
Part Number | H25R1202 | |
Description | Reverse Conducting IGBT | |
Manufacturers | Infineon | |
Logo | ||
There is a preview and H25R1202 download ( pdf file ) link at the bottom of this page. Total 12 Pages |
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IHW25N120R2www.DataSheet4U.com
Reverse Conducting IGBT with monolithic body diode
Features:
• Powerful monolithic Body Diode with very low forward voltage
• Body diode clamps negative voltages
• Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
• NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
• Low EMI
• Qualified according to JEDEC1 for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications:
• Inductive Cooking
• Soft Switching Applications
C
G
E
PG-TO-247-3-21
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
IHW25N120R2
Maximum Ratings
1200V
25A
1.6V
175°C H25R1202 PG-TO-247-3-21
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C)
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Diode surge non repetitive current, tp limited by Tjmax
TC = 25°C, tp = 10ms, sine halfwave
TC = 25°C, tp ≤ 2.5µs, sine halfwave
TC = 100°C, tp ≤ 2.5µs, sine halfwave
Gate-emitter voltage
Transient Gate-emitter voltage (tp < 10 µs, D < 0.01)
Power dissipation TC = 25°C
Operating junction temperature
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
VCE
IC
ICpuls
-
IF
IFpuls
IFSM
VGE
Ptot
Tj
Tstg
-
1200
50
25
75
75
50
25
75
50
130
120
±20
±25
365
-40...+175
-55...+175
260
V
A
V
W
°C
1 J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2 Feb. 07
|
|
Soft Switching Series
IHW25N120R2www.DataSheet4U.com
70A
60A VGE=20V
15V
50A 13V
40A 11V
9V
30A 7V
20A
10A
0A
0V 1V 2V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
70A
60A VGE=20V
15V
50A 13V
11V
40A 9V
30A 7V
20A
10A
0A
0V 1V 2V 3V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
70A
60A
50A
40A
30A
20A TJ=175°C
25°C
10A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
2.5V
IC=50A
2.0V
1.5V
1.0V
IC=25A
IC=12.5A
0.5V
0.0V
0°C
50°C
100°C
150°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter saturation
voltage as a function of junction
temperature
(VGE =15V)
Power Semiconductors
5
Rev. 2 Feb. 07
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H25R1202 electronic component. |
Information | Total 12 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Product Image and Detail view | 1. Datasheet - 1200V, 25A, IGBT [ Learn More ] | |
Download | [ H25R1202.PDF Datasheet ] |
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