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PDF AUIRFR2905Z Data sheet ( Hoja de datos )
| Número de pieza | AUIRFR2905Z | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96320
AUTOMOTIVE GRADE AUIRFR2905Z
HEXFET® Power MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
G
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieveextremelylowon-resistancepersiliconarea. Additional
features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Absolute Maximum Ratings
D V(BR)DSS
55V
RDS(on) typ. 11.1mΩ
max. 14.5mΩ
S ID (Silicon Limited)
59A k
ID (Package Limited)
42A
D
G
Gate
S
D
G
D-Pak
AUIRFR2905Z
D
Drain
S
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
Max.
59 k
42k
Units
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)
IDM Pulsed Drain Current
42
240
PD @TC = 25°C Power Dissipation
Linear Derating Factor
110 W
0.72 W/°C
VGS
EAS
EAS (Tested )
IAR
EAR
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy(Thermally limited)
hSingle Pulse Avalanche Energy Tested Value
ÃAvalanche Current
gRepetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
jRθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
HEXFET® is a registered trademark of International Rectifier.
± 20
55
82
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
1.38
50
110
V
mJ
A
mJ
°C
Units
°C/W
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
07/20/10
1 page  
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AUIRFR2905Z
2400
2000
1600
1200
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
800
400
0
1
Coss
Crss
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
ID= 36A
16
12
VDS= 44V
VDS= 28V
VDS= 11V
8
4
0
0
FOR TEST CIRCUIT
SEE FIGURE 13
10 20 30 40
QG Total Gate Charge (nC)
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
TJ = 175°C
10.0
TJ = 25°C
1.0
0.1
0.2
VGS = 0V
0.6 1.0 1.4 1.8
VSD, Source-toDrain Voltage (V)
2.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100µsec
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1 10
1msec
10msec
100
VDS , Drain-toSource Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5
5 Page 
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D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
AUIRFR2905Z
TR
16.3 ( .641 )
15.7 ( .619 )
TRR TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
13 INCH
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Limited by TJmax, starting TJ = 25°C, L = 0.08mH This value determined from sample failure population. 100%
RG = 25Ω, IAS = 36A, VGS =10V. Part not
tested to this value in production.
recommended for use above this value.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
application note #AN-994
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
from 0 to 80% VDSS .
Rθ is measured at TJ approximately 90°C
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 42A
www.irf.com
11
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| PDF Descargar | [ Datasheet AUIRFR2905Z.PDF ] | |
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