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What is 0N05HDL?

This electronic component, produced by the manufacturer "Motorola Semiconductors", performs the same function as "MTP60N05HDL".


0N05HDL Datasheet PDF - Motorola Semiconductors

Part Number 0N05HDL
Description MTP60N05HDL
Manufacturers Motorola Semiconductors 
Logo Motorola Semiconductors Logo 


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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MTP60N05HDL/D
www.DataSheet4U.com
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HDTMOS E-FET .
Power Field Effect Transistor
MTP60N05HDL
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
TMOS POWER FET
60 AMPERES
50 VOLTS
RDS(on) = 0.014 OHM
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
D
G
CASE 221A–06, Style 5
TO–220AB
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M)
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp 10 ms)
Drain Current — Continuous
— Continuous @ 100°C
— Single Pulse (tp 10 µs)
Total Power Dissipation
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
50 Vdc
50 Vdc
± 15 Vdc
± 20 Vpk
60 Adc
42
180 Apk
150 Watts
1.0 W/°C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25 Ω)
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from Case for 5 Seconds
TJ, Tstg
EAS
RθJC
RθJA
TL
– 55 to 175
540
1.0
62.5
260
°C
mJ
°C/W
°C
E–FET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Preferred devices are Motorola recommended choices for future use and best overall value.
©MMoottoororolal,aInTc.M19O9S7 Power MOSFET Transistor Device Data
1

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0N05HDL equivalent
MTP60N05HDL
8.0
60 1000
www.DataSheet4U.com
VDD = 25 V
6.0
QT
VGS 50
ID = 60 A
VGS = 5.0 V
TJ = 25°C
40
tr
tf
td(off)
4.0 30
Q1
2.0 Q3
Q2
TJ = 60°C
ID = 5.0 A
20
10
VDS
00
0 10 20 30 40 50
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate–To–Source and Drain–To–Source
Voltage versus Total Charge
100 td(on)
10
1.0
10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
100
DRAIN–TO–SOURCE DIODE CHARACTERISTICS
The switching characteristics of a MOSFET body diode
are very important in systems using it as a freewheeling or
commutating diode. Of particular interest are the reverse re-
covery characteristics which play a major role in determining
switching losses, radiated noise, EMI and RFI.
System switching losses are largely due to the nature of
the body diode itself. The body diode is a minority carrier de-
vice, therefore it has a finite reverse recovery time, trr, due to
the storage of minority carrier charge, QRR, as shown in the
typical reverse recovery wave form of Figure 11. It is this
stored charge that, when cleared from the diode, passes
through a potential and defines an energy loss. Obviously,
repeatedly forcing the diode through reverse recovery further
increases switching losses. Therefore, one would like a
diode with short trr and low QRR specifications to minimize
these losses.
The abruptness of diode reverse recovery effects the
amount of radiated noise, voltage spikes, and current ring-
ing. The mechanisms at work are finite irremovable circuit
parasitic inductances and capacitances acted upon by high
di/dts. The diode’s negative di/dt during ta is directly con-
trolled by the device clearing the stored charge. However,
the positive di/dt during tb is an uncontrollable diode charac-
teristic and is usually the culprit that induces current ringing.
Therefore, when comparing diodes, the ratio of tb/ta serves
as a good indicator of recovery abruptness and thus gives a
comparative estimate of probable noise generated. A ratio of
1 is considered ideal and values less than 0.5 are considered
snappy.
Compared to Motorola standard cell density low voltage
MOSFETs, high cell density MOSFET diodes are faster
(shorter trr), have less stored charge and a softer reverse re-
covery characteristic. The softness advantage of the high
cell density diode means they can be forced through reverse
recovery at a higher di/dt than a standard cell MOSFET
diode without increasing the current ringing or the noise gen-
erated. In addition, power dissipation incurred from switching
the diode will be less due to the shorter recovery time and
lower switching losses.
60
VGS = 0 V
50 TJ = 25°C
40
30
20
10
0
0.5 0.6 0.7 0.8 0.9
VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)
1.0
Figure 10. Diode Forward Voltage versus Current
Motorola TMOS Power MOSFET Transistor Device Data
5


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