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PDF 2SB166040ML Data sheet ( Hoja de datos )
| Número de pieza | 2SB166040ML | |
| Descripción | SCHOTTKY BARRIER DIODE CHIPS | |
| Fabricantes | Silan Microelectronics Joint-stock | |
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2SB166040ML
2SB166040ML SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB166040ML is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
Ø Low power losses, high efficiency;
Ø Guard ring construction for transient protection;
Ø High ESD capability;
Ø High surge capability;
Ø Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits.;
Ø Chip Size:1660µm X 1660µm;
Ø Chip Thickness: 280±20µm;
Chip Topography and Dimensions
La: Chip Size: 1660µm;
Lb: Pad Size: 1565µm;
ORDERING SPECIFICATIONS
Product Name
2SB166040MLYY
Specification
For axial leads package
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge [email protected]
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
60
5
150
125
-40~125
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
VBR
VF
IR
Test Conditions
IR=0.5mA
IF=5A
VR=60V
Min.
60
--
--
Max.
--
0.70
0.5
Unit
V
V
mA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2007.04.27
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Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SB166040ML | SCHOTTKY BARRIER DIODE CHIPS | Silan Microelectronics Joint-stock |
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