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PDF B100NF04L Data sheet ( Hoja de datos )
| Número de pieza | B100NF04L | |
| Descripción | STB100NF04L | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB100NF04L
N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STB100NF04L
40 V <0.0042Ω
s TYPICAL RDS(on) = 0.0036 Ω
s LOW THRESHOLD DRIVE
s 100% AVALANCHE TESTED
s LOGIC LEVEL DEVICE
ID
100 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s SOLENOID AND RELAY DRIVERS
3
1
D2PAK
TO-263
(Suffix “T4”)
ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(*) Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM(•) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(*) Current Limited by package
February 2002
.
Value
40
40
± 16
100
70
400
300
2
3.6
1.4
-65 to 175
175
(1) ISD ≤100A, di/dt ≤240A/µs, VDD ≤ 32V, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, IAR = 50A, VDD= 30V
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
°C
°C
1/9
1 page  
Normalized Gate Threshold Voltage vs Temperature
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STB100NF04L
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage Temperature.
..
5/9
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet B100NF04L.PDF ] | |
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