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PDF 2SK4016 Data sheet ( Hoja de datos )
| Número de pieza | 2SK4016 | |
| Descripción | Switching Regulator Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK4016
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI)
2SK4016
Switching Regulator Applications
Unit: mm
• Low drain-source ON-resistance: RDS (ON) = 0.33 Ω (typ.)
• High forward transfer admittance: |Yfs| = 10 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
600
600
±30
13
52
50
1033
13
5.0
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Thermal Characteristics
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
2.5 °C/W
62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1
2
3
1 2005-05-30
1 page  
2SK4016
www.DataSheet4U.com
rth – tw
10
1
0.1
0.01
Duty = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
10μ
100μ
1ｍ
10ｍ
PDM
t
T
Duty = t/T
Rth (ch-c) = 2.5°C/W
100ｍ 1 10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
ID max (PULSED) *
100 μs *
ID max (CONTINUOUS) *
10
1 ms *
DC OPERATION
Tc = 25°C
1
*SINGLE NONREPETITIVE
0.1 PULSE Tc = 25°C
CURVES MUST BE
DERATED LINEARLY WITH
0.01
1
INCREASE IN TEMPERATURE
VDSS max
10 100
1000
DRAIN−SOURCE VOLTAGE VDS (V)
1200
1000
EAS – Tch
800
600
400
200
0
25
50
75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 90 V, L = 10.7 mH
Waveform
ΕEAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2005-05-30
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK4016.PDF ] | |
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