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PDF 2SK3863 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3863 | |
| Descripción | Switching Regulator Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK3863
www.DataSheet4U.com
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3863
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.)
• High forward transfer admittance: |Yfs| = 2.8 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
6.8 MAX.
5.2 ± 0.2
Unit: mm
0.6 MAX.
0.95 MAX.
0.6 ± 0.15
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
500
±30
5
20
40
180
5
4
150
-55 to 150
V
V
V
A
W
mJ
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Rth (ch-c)
3.125
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C
during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12.2 mH, IAR = 5 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
2.3 2.3
0.6 MAX.
123
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
2
1
3
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B5B
Weight: 0.36 g (typ.)
6.8 MAX.
5.2 ± 0.2
0.6 MAX.
0.6 ± 0.15
0.95 MAX.
0.6 ± 0.15
2.3 2.3
123
2.3 2.3
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
0.6 MAX.
2
1
3
JEDEC
―
JEITA
―
TOSHIBA
2-7B7B
Weight: 0.36 g (typ.)
1 2010-04-13
1 page  
2SK3863
www.DataSheet4U.com
SINGLE PULSE
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100
ID max (PULSE) *
10
ID max (CONTINUOUS)
1 ms *
1 DC OPERATION
Tc = 25°C
100 μs *
0.1
* SINGLE NONPETITIVE PULSE
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.01
1 10 100
1000
DRAIN−SOURCE VOLTAGE VDS (V)
EAS – Tch
200
160
120
80
40
0
25 50
75 100 125 150
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVEFORM
RG = 25 Ω
VDD = 90 V, L = 12.2 mH
ΕAS
=
1
2
⋅L
⋅I2
⋅
⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2010-04-13
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK3863.PDF ] | |
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