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PDF AOB440 Data sheet ( Hoja de datos )
| Número de pieza | AOB440 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Alpha & Omega Semiconductors | |
| Logotipo |  |
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AOB440
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOB440 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate
charge. This device is suitable for use in UPS, high
current switching applications. Standard Product
AOB440 is Pb-free (meets ROHS & Sony 259
specifications).
Features
VDS (V) = 60V
ID = 75 A
(VGS = 10V)
RDS(ON) < 7.5mΩ (VGS = 10V)
TO-263
D2-PAK
Top View
Drain Connected to
Tab
GD S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
CurrentG
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy L=0.1mH C
ID
IDM
IAR
EAR
TC=25°C
Power Dissipation B TC=100°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
60
±20
75
75
150
80
320
150
75
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case B
t≤10s
Steady-State
Steady-State
Symbol
RθJA
RθJA
RθJC
Typ
8
35
0.7
Max
12
45
1
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
www.aosmd.com
1 page  
AOB440
www.DataSheet4U.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200 60
50
150
40
100 30
20
50
10
0
0 25 50 75 100 125 150 175
TCASE (°C)
Figure 13: Power De-rating (Note B)
0
0
25 50 75 100 125 150
TCASE (°C)
Figure 12: Current De-rating (Note B)
175
150
TA=25°C
125
100
75
TA=150°C
50
25
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 10: Single Pulse Avalanche capability
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet AOB440.PDF ] | |
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