DIM1200NSM17-E000 Datasheet PDF - Dynex Semiconductor
Part Number | DIM1200NSM17-E000 | |
Description | Single Switch IGBT Module | |
Manufacturers | Dynex Semiconductor | |
Logo | ||
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DIM1200NSM17-E000
Single Switch IGBT Module
Replaces June 2004 version, issue PDS5644-2.0
FEATURES
I Trench Gate Field Stop Technology
I Low Conduction Losses
I Low Switching Losses
I 10µs Short Circuit Withstand
I Isolated MMC Base with AlN Substrates
I High Thermal Cycling Capability
APPLICATIONS
I High Reliability Inverters
G Wind Turbines
G Motor Controllers
G UPS Systems
I Traction
G Propulsion Drives
G Auxiliaries
KEY PARAMETERS
VCES
VCE(sat) *
IC
IC(PK)
(typ)
(max)
(max)
1700V
2.0V
1200A
2400A
*Measured at auxiliary terminals.
PDS5644-3.0 July 2004
Aux C
External connection
C1 C2
G
Aux E
E1 E2
External connection
Fig. 1 Single switch circuit diagram
The Powerline range of high power modules includes half
bridge, chopper, dual, single and bi-directional switch
configurations covering voltages from 600V to 3300V and
currents up to 3600A.
The DIM1200NSM17-E000 is a single switch 1700V, n
channel enhancement mode, insulated gate bipolar transistor
(IGBT) module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus full 10µs short circuit withstand.
This module is optimised for applications requiring high thermal
cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1200NSM17-E000
Note: When ordering, please use the complete part number.
C1
E1
E2
G
E2
C1
C2
E2 - Aux Emitter
C1 - Aux Collector
Outline type code: N
(See package details for further information)
Fig. 2 Module outline
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1200NSM17-E000
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ELECTRICAL CHARACTERISTICS
T = 25˚C unless stated otherwise
case
Symbol
Parameter
td(off)
tf
E
OFF
td(on)
tr
EON
Q
g
Qrr
Irr
E
REC
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Gate charge
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Test Conditions
I = 1200A
C
VGE = ±15V
VCE = 900V
RG(ON) = 1.2Ω
R
G(OFF)
=
1.5Ω
L ~ 100nH
IF = 1200A, VR = 900V,
dIF/dt = 5200A/µs
Min. Typ. Max. Units
- 1200 -
ns
- 200 - ns
- 320 - mJ
- 900 - ns
- 220 - ns
- 300 - mJ
- 14 - µC
- 275 - µC
- 950 -
A
- 180 - mJ
Tcase = 125˚C unless stated otherwise
Symbol
Parameter
Test Conditions
t Turn-off delay time
d(off)
IC = 1200A
tf Fall time
VGE = ±15V
EOFF Turn-off energy loss
V = 900V
CE
td(on) Turn-on delay time
RG(ON) = 1.2Ω
t Rise time
r
RG(OFF) = 1.5Ω
EON Turn-on energy loss
L ~ 100nH
Q
rr
Diode reverse recovery charge
I = 1200A, V = 900V,
FR
Irr Diode reverse current
dIF/dt = 5200A/µs
EREC Diode reverse recovery energy
Note:
Switching Characteristic measurements taken using standard driver circuit conditions.
Min. Typ. Max. Units
- 1300 -
ns
- 300 - ns
- 420 - mJ
- 900 - ns
- 250 - ns
- 400 - mJ
- 475 - µC
- 1150 -
A
- 320 - mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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