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PDF IXFR14N100Q2 Data sheet ( Hoja de datos )
| Número de pieza | IXFR14N100Q2 | |
| Descripción | HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
Electrically Isolated Tab
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
Low Rg, High dv/dt, Low trr
Advanced Technical Data
IXFR14N100Q2
www.DataSheet4U.com
VDSS = 1000 V
ID25 = 9.5 A
RDS(on) =
1.0 Ω
trr ≤ 300 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IIADRM
EEAARS
dv/dt
PD
TTJJM
Tstg
TL
VISOL
FC
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TTCC
=
=
25°C,
25°C
pulse
width
limited
by
TJM
TTCC
= 25°C
= 25°C
TISJ
≤
≤
I1D5M0, °dCi/d, tR≤G
100
=2
A/µs,
Ω
VDD
≤
VDSS,
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS, t = 1 min
ISOL = 1mA, t = 1 s
Mounting Force
Maximum Ratings
1000
1000
±30
±40
9.5
56
14
V
V
V
V
A
A
A
50 mJ
2.5 J
20 V/ns
200
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
2500
3000
V~
V~
20..120 / 4.6..27 N/lb
5g
ISOPLUS247 (IXFR)
E153432
G
CE
G = Gate
E = Source
ISOLATED TAB
C = Drain
Features
z Double metal process for low gate
resistance
z Epoxy meet UL 94 V-0, flammability
classification
z Low RDS ,(on) low Qg
z Avalanche energy and current rated
z Fast intrinsic rectifier
Applications
z DC-DC converters
z Switched-mode and resonant-mode
power supplies, >500kHz switching
z DC choppers
z Pulse generation
z Laser drivers
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
VGS = ±30 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = IT
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1000
3.0
V
5.0 V
±200 nA
25 µA
1 mA
0.90 Ω
Advantages
z Easy to mount
z Space savings
z High power density
© 2004 IXYS All rights reserved
DS99229(11/04)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFR14N100Q2.PDF ] | |
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