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PDF IXFC16N50P Data sheet ( Hoja de datos )
| Número de pieza | IXFC16N50P | |
| Descripción | PolarHV HiPerFET Power MOSFET | |
| Fabricantes | IXYS | |
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PolarHVTM
HiPerFET
Power MOSFET
Electrically Isolated Tab,
N-Channel Enhancement Mode,
Fast Intrinsic Diode
Avalanche Rated
Advance Technical Information
www.DataSheet4U.com
IXFC 16N50P
VDSS =
ID25 =
=RDS(on)
trr =
500 V
10 A
450 mΩ
200 ns
Symbol
VDSS
V
DGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
F
C
Test Conditions
TJ = 25°C to 175°C
T
J
=
25°C
to
175°C;
R
GS
=
1
MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/µs,
V
DD
≤
V,
DSS
TJ ≤ 150°C, RG = 10 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
50/60 Hz, RMS, t = 1, leads-to-tab
Mounting Force
Maximum Ratings
500 V
500 V
ISOPLUS220TM(IXFC)
E153432
±30
±40
10
50
10
25
750
V
VG
A DS
A
A G = Gate
mJ S = Source
mJ
Isolated Tab
D = Drain
TAB = Drain
10 V/ns Features
300
-55 ... +150
150
-55 ... +150
300
250
2500
11..65/2.5..15
z Silicon chip on Direct-Copper-Bond
W substrate
°C - High power dissipation
°C - Isolated mounting surface
°C
- 2500V electrical isolation
z Low drain to tab capacitance(<30pF)
°C z Unclamped Inductive Switching (UIS)
°C rated
V~ z Low package inductance
N/lb - easy to drive and to protect
Weight
2 g Advantages
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 250 µA
Characteristic Values
Min. Typ. Max.
500 V
z Easy to mount
z Space savings
z High power density
V
GS(th)
V = V , I = 1 mA
DS GS D
3.0 5.5 V
IGSS VGS = ±30 VDC, VDS = 0
±100 nA
IDSS
VDS = VDSS
V =0V
GS
T
J
=
125°C
5 µA
50 µA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
450 mΩ
© 2005 IXYS All rights reserved
DS99411(03/05)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFC16N50P.PDF ] | |
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