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What is FGA40N60UFD?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "Ultrafast IGBT".


FGA40N60UFD Datasheet PDF - Fairchild Semiconductor

Part Number FGA40N60UFD
Description Ultrafast IGBT
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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FGA40N60UFD
Ultrafast IGBT
IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
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Features
• High speed switching
• Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A
• High input impedance
• CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
GC E
TO-3P
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VCES
VGES
IC
ICM (1)
IF
IFM
PD
TJ
Tstg
TL
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 100°C
Diode Continuous Forward Current
Diode Maximum Forward Current
@ TC = 100°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25°C
@ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(DIODE)
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
FGA40N60UFD
600
± 20
40
20
160
15
160
160
64
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.77
1.7
40
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A

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FGA40N60UFD equivalent
3000
1000
Eon
100 Eoff
Eoff
10
10
Common Emitter
V = 300V, V = ± 15V
CC GE
R
G
=
10
T = 25
C
TC = 125
15 20 25 30 35 40
Collector Current , Ic (A)
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Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R =15
L
12 (Tc=25 )
9
6
300V
200V
Vcc=100V
3
0
0 30 60 90 120
Gate Charge, Qg (nC)
Fig 14. Gate Charge Characteristics
500
IC MAX. (Pulsed)
100
IC MAX. (Continuous)
10
50us
100us
1
DC Operation
1 Single Nonrepetitive
Pulse TC = 25
Curves must be derated
linearly with increase
in temperature
0.1
0.3 1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Fig 15. SOA Characteristics
500
100
10
1
0.1
1
Safe Operating Area
VGE=20V, TC=100oC
10 100
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1000
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
single pulse
1E-3
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100 101
Fig 17. Transient Thermal Impedance of IGBT
©2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A


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1. Datasheet - 600V, Ultrafast IGBT

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Featured Datasheets

Part NumberDescriptionMFRS
FGA40N60UFDThe function is Ultrafast IGBT. Fairchild SemiconductorFairchild Semiconductor

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