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PDF 3MBI150UC-120 Data sheet ( Hoja de datos )
| Número de pieza | 3MBI150UC-120 | |
| Descripción | 1200V / 150A 3 in one-package | |
| Fabricantes | Fuji Electric | |
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3MBI150UC-120
IGBT Module U-Series 1200V / 150A 3 in one-package
Features
· High speed switching
· Voltage drive
· Low inductance module structure
· With shunt resistors
Applications
· Inverter for Motor drive
· AC and DC Servo drive amplifier
· Uninterruptible power supply
· Industrial machines, such as Welding machines
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item
Collector-Emitter voltage
Gate-Emitter voltaga
Collector current
Symbol
VCES
VGES
IC
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ICp
Collector Power Dissipation
Junction temperature
Storage temperature
Isolation voltage between terminal and copper base *1
Screw Torque
Mounting *2
-IC
-IC pulse
PC
Tj
Tstg
Viso
Conditions
Continuous Tc=25°C
Tc=80°C
1ms Tc=25°C
Tc=80°C
1 device
AC:1min.
*1 : All terminals should be connected together when isolation test will be done.
*2 : Recommendable value : 2.5 to 3.5 N·m(M5)
Rating
1200
±20
200
150
400
300
150
300
735
+150
-40 to +125
2500
3.5
Unit
V
V
A
W
°C
VAC
N·m
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item
Symbols Conditions
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Input capacitance
Turn-on time
Turn-off time
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip*3
Shunt resistance
ICES
IGES
VGE(th)
VCE(sat)
(chip)
Cies
ton
tr
tr(i)
toff
tf
VF
(chip)
trr
R lead
R shunt
VGE=0V, VCE=1200V
VCE=0V, VGE=±20V
VCE=20V, IC=150mA
VGE=15V, IC=150A Tj=25°C
Tj=125°C
VCE=10V, VGE=0V, f=1MHz
VCC=600V
IC=150A
VGE=±15V
RG=2.2 Ω
VGE=0V
Tj=25°C
IF=150A
Tj=125°C
IF=150A
Without shunt resistance
Resistance of R1 to R6 *4
*3: Biggest internal terminal resistance among arm.
*4 R1 to R2 is shown in equivalent circuit (p5)
Characteristics
Min.
Typ.
––
––
4.5 6.5
– 1.75
– 2.00
– 17
– 0.36
– 0.21
– 0.03
– 0.37
– 0.07
– 1.60
– 1.70
––
– 5.1
– 2.4
Max.
1.0
200
8.5
2.10
–
–
1.20
0.60
–
1.00
0.30
1.90
–
0.35
–
–
Unit
mA
nA
V
V
nF
µs
V
µs
mΩ
Thermal resistance characteristics
Items
Symbols Conditions
Characteristics
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(j-c)
Rth(c-f)*5
IGBT
FWD
With thermal compound
Min.
–
–
–
Typ.
–
–
0.05
*5 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
Max.
0.17
0.28
–
Unit
°C/W
°C/W
°C/W
1 page  
3MBI150UC-120
Outline Drawings, mm
M635
www.DataSheet4U.com
IGBT Module
Equivalent Circuit Schematic
19,20,21
( ) shows reference dimension.
38
39
1,2,3
35
R1
37 R2
34 32
33
U
4,5,6
36
7,8,9
29
R3
31 R4
28 26
27
V
10,11,12
30 13,14,15
23 22
R5
25 R6
W
16,17,18
24
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 3MBI150UC-120.PDF ] | |
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