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PDF ME4542 Data sheet ( Hoja de datos )
| Número de pieza | ME4542 | |
| Descripción | N- and P-Channel 30-V (D-S) MOSFET | |
| Fabricantes | Matsuki | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de ME4542 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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N- and P-Channel 30-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME4542 is the N- and P-Channel logic enhancement mode
power field effect transistors are produced using high cell density ,
DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as cellular phone
and notebook computer power management and other battery
powered circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount package.
PIN CONFIGURATION
(SOP-8)
Top View
ME4542www.DataSheet4U.com
FEATURES
● 30V/6.9A,RDS(ON)=25mΩ@VGS=10V (N-Ch)
● 30V/5.8A,RDS(ON)=40mΩ@VGS=4.5V (N-Ch)
● -30V/-6.1A,RDS(ON)=35mΩ@VGS=-10V (P-Ch)
● -30V/-5.1A, RDS(ON)=58mΩ@ VGS=-4.5V (P-Ch)
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
TA=25℃
Current(tJ=150℃)
TA=70℃
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Energy with Single Pulse
Maximum Power Dissipation
TA=25℃
TA=70℃
Operating Junction Temperature
Thermal Resistance-Junction to Ambient*
Thermal Resistance-Junction to Case
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDSS
VGSS
ID
IDM
IS
EAS
PD
TJ
RθJA
RθJC
N-Channel P-Channel
30 -30
±20 ±20
6.9 -6.1
5.5 -4.9
30 -30
1.7 -1.7
10 20
2.0
1.3
-55 to 150
Steady 75 Steady 65
10sec 47 10sec 35
44 30
Mar, 2007-Ver3.1
Unit
V
V
A
A
A
mJ
W
℃
℃/W
℃/W
01
1 page  
N- and P-Channel 30-V (D-S) MOSFET
Typical Characteristics (TJ =25℃ Noted)
P-CHANNEL
ME4542www.DataSheet4U.com
Mar, 2007-Ver3.1
05
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet ME4542.PDF ] | |
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