DataSheet39.com

What is H55S2562JFR-A3M?

This electronic component, produced by the manufacturer "Hynix Semiconductor", performs the same function as "256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O".


H55S2562JFR-A3M Datasheet PDF - Hynix Semiconductor

Part Number H55S2562JFR-A3M
Description 256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O
Manufacturers Hynix Semiconductor 
Logo Hynix Semiconductor Logo 


There is a preview and H55S2562JFR-A3M download ( pdf file ) link at the bottom of this page.





Total 30 Pages



Preview 1 page

No Preview Available ! H55S2562JFR-A3M datasheet, circuit

www.DataSheet4U.com
256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O
Specification of
256M (16Mx16bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 4,194,304 x16
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.1 / July. 2009
1

line_dark_gray
H55S2562JFR-A3M equivalent
11
256Mbit (16Mx16biwtw)wM.DoatbaSihleeeSt4DU.cRom
H55S2562JFR Series
FEATURES
Standard SDRAM Protocol
Clock Synchronization Operation
- All the commands registered on positive edge of basic input clock (CLK)
MULTIBANK OPERATION - Internal 4bank operation
- During burst Read or Write operation, burst Read or Write for a different bank is performed.
- During burst Read or Write operation, a different bank is activated and burst Read or Write
for that bank is performed
- During auto precharge burst Read or Write, burst Read or Write for a different bank is performed
Power Supply Voltage: VDD = 1.8V, VDDQ = 1.8V
LVCMOS compatible I/O Interface
Low Voltage interface to reduce I/O power
Programmable burst length: 1, 2, 4, 8 or full page
Programmable Burst Type: sequential or interleaved
Programmable CAS latency of 3 or 2
Programmable Drive Strength
Low Power Features
- Programmable PASR(Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self Refresh)
- Programmable DS (Drive Strength)
- Deep Power Down Mode
Operating Temperature
- Mobile Temp.: -30oC ~ 85oC
Package Type
- 54ball FBGA, 0.8mm pitch, 8mm x 8mm, t=1.0mm max
This product is in compliance with the directive pertaining of RoHS.
Rev 1.1 / July. 2009
5


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H55S2562JFR-A3M electronic component.


Information Total 30 Pages
Link URL [ Copy URL to Clipboard ]
Download [ H55S2562JFR-A3M.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
H55S2562JFR-A3MThe function is 256MBit MOBILE SDR SDRAM based on 4M x 4Bank x16 I/O. Hynix SemiconductorHynix Semiconductor

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

H55S     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search