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What is H55S2622JFR-60M?

This electronic component, produced by the manufacturer "Hynix Semiconductor", performs the same function as "256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O".


H55S2622JFR-60M Datasheet PDF - Hynix Semiconductor

Part Number H55S2622JFR-60M
Description 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O
Manufacturers Hynix Semiconductor 
Logo Hynix Semiconductor Logo 


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256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O
Specification of
256M (8Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 2,097,152 x32
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Nov. 2008
1

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H55S2622JFR-60M equivalent
11256Mbit (8Mx32bit) Mobile SDR
H55Sw2w6w2.D2aJtaFSRheSeet4rUi.ecsom
H55S2532JFR Series
FEATURES
Standard SDRAM Protocol
Clock Synchronization Operation
- All the commands registered on positive edge of basic input clock (CLK)
MULTIBANK OPERATION - Internal 4bank operation
- During burst Read or Write operation, burst Read or Write for a different bank is performed.
- During burst Read or Write operation, a different bank is activated and burst Read or Write for that bank is per-
formed
- During auto precharge burst Read or Write, burst Read or Write for a different bank is performed
Power Supply Voltage: VDD = 1.8V, VDDQ = 1.8V
LVCMOS compatible I/O Interface
Low Voltage interface to reduce I/O power
Programmable burst length: 1, 2, 4, 8 or full page
Programmable Burst Type: sequential or interleaved
Programmable CAS latency of 3 or 2
Programmable Drive Strength
Low Power Features
- Programmable PASR(Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self Refresh)
- Programmable DS (Drive Strength)
- Deep Power Down Mode
Operating Temperature
- Mobile Temp.: -30oC ~ 85oC
Package Type: 90ball FBGA, 0.8mm pitch (Lead & Halogen Free)
Address Table
Row Address
Column Address
Page Size
A0 ~ A11
A0 ~ A8
2KByte (Normal)
A0 ~ A12
A0 ~ A7
1KByte (Reduced)
Part Number
H55S2622JFR
H55S2532JFR
Rev 1.0 / Nov. 2008
5


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On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H55S2622JFR-60M electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
H55S2622JFR-60MThe function is 256MBit MOBILE SDR SDRAMs based on 2M x 4Bank x32 I/O. Hynix SemiconductorHynix Semiconductor

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