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What is H55S1222EFP-A3E?

This electronic component, produced by the manufacturer "Hynix Semiconductor", performs the same function as "128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O".


H55S1222EFP-A3E Datasheet PDF - Hynix Semiconductor

Part Number H55S1222EFP-A3E
Description 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
Manufacturers Hynix Semiconductor 
Logo Hynix Semiconductor Logo 


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128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O
Specification of
128M (4Mx32bit) Mobile SDRAM
Memory Cell Array
- Organized as 4banks of 1,048,576 x32
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev 1.0 / Jun. 2008
1

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H55S1222EFP-A3E equivalent
1128Mbit (4Mx32bit) MobwilwewS.DDaRtaSMheeemt4Uo.rcyom
H55S1222EFP Series
FEATURES
Standard SDRAM Protocol
Clock Synchronization Operation
- All the commands registered on positive edge of basic input clock (CLK)
MULTIBANK OPERATION - Internal 4bank operation
- During burst Read or Write operation, burst Read or Write for a different bank is performed.
- During burst Read or Write operation, a different bank is activated and burst Read or Write
for that bank is performed
- During auto precharge burst Read or Write, burst Read or Write for a different bank is performed
Power Supply Voltage : VDD / VDDQ = 1.7V to 1.95V
LVCMOS compatible I/O Interface
Low Voltage interface to reduce I/O power
Programmable burst length: 1, 2, 4, 8 or full page
Programmable Burst Type : sequential or interleaved
Programmable CAS latency of 3 or 2
Programmable Drive Strength
Low Power Features
- Programmable PASR(Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self Refresh)
- Programmable DS (Drive Strength)
- Deep Power Down Mode
-25oC ~ 85oC or -30oC ~ 85oC Operation Temperature
- Extended Temp. : -25oC ~ 85oC
- Mobile Temp. : -30oC ~ 85oC
Package Type : 90Ball FBGA
Rev 1.0 / Jun. 2008
5


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for H55S1222EFP-A3E electronic component.


Information Total 54 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
H55S1222EFP-A3EThe function is 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O. Hynix SemiconductorHynix Semiconductor
H55S1222EFP-A3MThe function is 128MBit MOBILE SDR SDRAMs based on 1M x 4Bank x32 I/O. Hynix SemiconductorHynix Semiconductor

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