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PDF IXTP1N80 Data sheet ( Hoja de datos )
| Número de pieza | IXTP1N80 | |
| Descripción | High Voltage MOSFET | |
| Fabricantes | IXYS | |
| Logotipo |  |
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High Voltage MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
Preliminary Data
IXTA 1N80
IXTP 1N80
IXTY 1N80
www.DataSheet4U.com
V
DSS
ID25
RDS(on)
= 800 V
= 750 mA
= 11 Ω
Symbol
Test Conditions
V
DSS
VDGR
VGS
VGSM
ID25
I
DM
T
J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
T
C
=
25°C,
pulse
width
limited
by
T
JM
I
AR
EAR
EAS
dv/dt
PD
TJ
T
JM
Tstg
Md
Weight
TC = 25°C
TC = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/µs,
V
DD
≤
V,
DSS
TJ ≤ 150°C, RG = 47 Ω
TC = 25°C
Mounting torque
TO-220
TO-252
TO-263
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
800 V
800 V
±20 V
±30 V
750 mA
3A
1.0 A
5 mJ
100 mJ
3 V/ns
40 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
1.13/10 Nm/lb.in.
4g
0.8 g
3g
300 °C
Symbol
VDSS
VGS(th)
I
GSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 25 µA
800 V
2.5 4.5 V
V
GS
=
±20
V,
DC
V
DS
=
0
±100 nA
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
500 µA
VGS = 10 V, ID = 500 mA
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
9.5 11 Ω
© 2003 IXYS All rights reserved
TO-220AB (IXTP)
GDS
TO-263 AA (IXTA)
D (TAB)
G
S
TO-252 AA (IXTY)
D (TAB)
G
S
D (TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
! International standard packages
! High voltage, Low RDS (on) HDMOSTM
process
! Rugged polysilicon gate cell structure
! Fast switching times
Applications
! Switch-mode and resonant-mode
power supplies
! Flyback inverters
! DC choppers
! High frequency matching
Advantages
! Space savings
! High power density
DS98822C(11/03)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet IXTP1N80.PDF ] | |
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