(PDF) JDP2S01AFS Datasheet - TOSHIBA Diode Silicon Epitaxial PIN Type

Número de pieza	JDP2S01AFS
Descripción	TOSHIBA Diode Silicon Epitaxial PIN Type
Fabricantes	Toshiba Semiconductor
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No Preview Available ! TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S01AFS JDP2S01AFS www.DataSheet4U.com UHF~VHF Band RF Switch Applications · Suitable for reducing set’s size as a result from enabling high-density mounting due to 2-pin small packages. · Low series resistance: rs = 0.65Ω(typ.) · Low capacitance: CT = 0.65 pF (typ.) Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Forward current Junction temperature Storage temperature range Symbol VR IF Tj Tstg Rating 30 50 150 −55~150 Unit V mA °C °C Unit: mm 0.6±0.05 A 0.2 0.07 M A ±0.05 0.1±0.05 0.48+-00..0023 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Reverse voltage Reverse current Forward voltage Capacitance Series resistance VR IR = 10 µA IR VR = 30 V VF IF = 50 mA CT VR = 1 V, f = 1 MHz rs IF = 10 mA, f = 100 MHz Note: Signal level when capacitance is measured. Vsig = 100 mVrms Marking JEDEC ― JEITA ― TOSHIBA 1-1L1A Weight: 0.0006 g Min Typ. Max Unit 30 ¾ ¾ V ¾ ¾ 0.1 µA ¾ 0.86 0.92 V ¾ 0.65 0.8 pF ¾ 0.65 1 Ω 1 1 2003-2-21 1 page

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