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Datasheet GTTV57NN771E0 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GTTV57NN771E0 | Thin-Film-Transistor LCD Module Product Specification Model: GTTV57NN771E0 Rev. No. A Issued Date. FEB. 19, 08
Page.
1 / 27
Thin-Film-Transistor LCD Module Model: GTTV57NN771E0
Acceptance
Solomon Goldentek Display Corp. 5F, No. 42, Shing Zhong Rd., Nei Hu, Taipei 114, Taiwan FAX: 886-2-87919825
Approved and |  SGD | transistor |
GTT Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GTT2602 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2602
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 34m 6.3A
The GTT2602 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effecti  GTM mosfet | | |
| 2 | GTT2603 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2603
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-20V 65m -5.0A
The GTT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effec GTM mosfet | | |
| 3 | GTT2604 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2604
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
30V 45m 5.5A
The GTT2604 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effecti GTM mosfet | | |
| 4 | GTT2605 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2605
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 80m -4.0A
The GTT2605 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effec GTM mosfet | | |
| 5 | GTT2610 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/06/13 REVISED DATE :
GTT2610
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
60V 90m 3A
The GTT2610 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effective GTM mosfet | | |
| 6 | GTT2623 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2623
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 170m -2.0A
The GTT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effe GTM mosfet | | |
| 7 | GTT2625 | P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/03/28 REVISED DATE :
GTT2625
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-30V 135m -2.3A
The GTT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effe GTM mosfet | |
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