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AWT6108 PDF Datasheet - ANADIGICS

Part Number AWT6108
Description Quad Band Power Amplifier Module
Manufacturers ANADIGICS 
Logo ANADIGICS Logo 
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AWT6108 datasheet, circuit
FEATURES
• InGaP HBT Technology
• Integrated Power Control (CMOS)
• Quad Band Applications
• +35 dBm GSM Output Power at 3.5 V
• +33 dBm DCS/PCS Output Power at 3.5 V
• 55% GSM PAE
• 50% DCS/PCS PAE
• Small Footprint: 7 x 10mm
• Low Profile: 1.4mm
• Power Control Range: >50 dB
• GPRS Capable (Class 12)
• Moisture Sensitivity Level (MSL) 3 at 260 °C
APPLICATIONS
• GSM850/GSM900/DCS/PCS Handsets
• Dual/Tri/Quad Band PDA
AWT6108
GSM850/GSM900/DCS/PCS
Quad Band Pwwoww.eDraAtamShpeleifti4eUr.cMomodule
With Integrated Power Control
PRELIMINARY DATA SHEET - Rev 1.0
AWT6108
20 Pin 7mm x 10mm
Surface Mount Module
PRODUCT DESCRIPTION
This quad band power amplifier module is designed
to support dual, tri and quad band applications. The
module includes an integrated power control
scheme that facilitates fast and easy production
calibration and reduces the number of external
components required to complete a power control
function.
The amplifier’s power control range is typically
55dB, with the output power set by applying an
analog voltage to VRAMP. The logical control inputs,
TX_EN and BS, are both 1.8 V and 3 V logic
compliant. The TX_EN is used to enable the
amplifier typically with the TX burst. The BS is used
to select which amplifier is enabled.
There are two amplifier chains, one to support
GSM850/900 bands, the other for DCS/PCS bands.
All of the RF ports for this device are internally
matched to 50 W. Internal DC blocks are provided at
the RF ports.
Figure 1: Block Diagram
08/2003

1 page
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AWT6108 pdf, schematic
AWT6108
www.DataSheet4U.com
Figure 2: Pinout (X-Ray Top View)
Table 1: Pin Description
PIN
NAME
DESCRIPTION
PIN
NAME
DESCRIPTION
1 DCS/PCS_IN DCS/PCS RF Input
11 GSM_OUT GSM850/900 RF Output
2
BS Band Select Logic Input 12
GND
Ground
3
TX_EN
TX Enable Logic Input
13
GND
Ground
4
VBATT
Battery Supply
Connection
Contol Voltage Output
14
VCC_OUT
Which Must be
Connected to VCC2,
No Decoupling
5
VREG
Regulated Supply
Connection
15
GND
Ground
6
VRAMP
Analog Signal Used to
Control the Output Power
16
GND
Ground
7
GSM_IN GSM850/900 RF Input
17 DCS/PCS_OUT DCS/PCS RF Output
VCC Control Input for
8
VCC2
GSM850/900 Pre-
18
GND
Ground
Amplifier
9
GND
Ground
19
GND
Ground
10
GND
Ground
20
VCC2
VCC Control Input for
DCS/PCS Pre-Amplifier
2 PRELIMINARY DATA SHEET - Rev 1.0
08/2003

2 Page
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AWT6108 equivalent
AWT6108
Table 6: Electrical Characteristics for GSM850/900
(VBATT = 3.5 V, VREG = 2.8 V, PIN = 2.0 dBm, Pulse Width = 1154 µs, Duty 25%,
ZIN = ZOUT = 50W, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_ENw=wHwI.GDHa)taSheet4U.com
PARAMETER
MIN TYP MAX UNIT
COMMENTS
Operating Frequency (FO)
824
880
-
-
849
915
MHz
Input Power
0 2 5 dBm
Output Power (PMAX)
34.5 35 - dBm Freq = 824 to 915 MHz
Degraded Output Power
32.0 32.5
-
dBm
VBATT = 3.0 V, TC = 85 °C,
VREG = 2.7 V, PIN = 0 dBm
PAE @ PMAX
48 55
-
% Freq = 824 to 915 MHz
Forward Isolation 1
-
-37 -30
dBm TX_EN = LOW, PIN = 5 dBm
Forward Isolation 2
-
-25 -10
dBm
TX_EN = HIGH, VRAMP = 0.2 V,
PIN = 5 dBm
Cross Isolation
(2FO @ DCS/PCS port)
-
-30 -20
dBm VRAMP = 0.2 V to VRAMP_MAX
Harmonics
2fo
3fo
-
-
-17 -5
-30 -15
dBm Over all output power levels
Stability
VSWR = 8:1 all phases,
POUT < 34.5 dBm
-
-
-
-
-36
-30
dBm
FOUT < 1GHz
FOUT > 1GHz
Ruggedness
- - 10:1
All load phases, POUT < 34.5 dBm
FTX = 849 MHz, RBW = 100 kHz,
-
-86 -83
dBm FRX = 869 to 894 MHz,
POUT < 34.5 dBm
RX Noise Power
FTX = 915 MHz, RBW = 100 kHz,
-
-81 -77
dBm FRX = 925 to 935 MHz,
POUT < 34.5 dBm
FTX = 915 MHz, RBW = 100 kHz,
-
-86 -83
dBm FRX = 935 to 960 MHz,
POUT < 34.5 dBm
Input VSWR
- - 2.5:1
Over all output power levels
PRELIMINARY DATA SHEET - Rev 1.0
08/2003
5

5 Page
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AWT6108 diode, scr
PACKAGE OUTLINE
AWT6108
www.DataSheet4U.com
Figure 7: Package Outline
Figure 8: Branding Specification
PRELIMINARY DATA SHEET - Rev 1.0
08/2003
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