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PDF AWT6130 Data sheet ( Hoja de datos )
| Número de pieza | AWT6130 | |
| Descripción | Cellular Dual Mode AMPS/CDMA 3.5V 29dBm Power Amplifier Module | |
| Fabricantes | ANADIGICS | |
| Logotipo |  |
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FEATURES
• InGaP HBT Technology
• High Efficiency: 48% AMPS, 37% CDMA
• Low Quiescent Current: 50 mA
• Low Leakage Current in Shutdown Mode: <1 µA
• Optimized for a 50 Ω System
• Low Profile Miniature Surface Mount Package
• CDMA 1XRTT Compliant
• CDMA 1xEV-DO Compliant
AWT6130
Cellular Dual ModwewwA.DMaPtaSSh/eCeDt4UM.cAom3.5V
29dBm Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
APPLICATIONS
• Single Mode CDMA Wireless Handsets
• Dual Mode AMPS/CDMA Wireless Handsets
• Tri Mode CDMA Handsets with GPS
M7 Package
10 Pin 4mm x 4mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6130 provides the additional output power
margin RF designers need to overcome additional
post-PA insertion loss in tri-mode handset designs
supporting E911 (GPS enabled). The device is
manufactured on an advanced InGaP HBT MMIC
technology offering state-of-the-art reliability,
temperature stability, and ruggedness. Selectable
bias modes that optimize efficiency for different output
power levels, and a shutdown mode with low leakage
current, increase handset talk and standby time. The
self-contained 4mm x 4mm surface mount package
incorporates matching networks optimized for output
power, efficiency, and linearity in a 50 Ω system.
GND at slug (pad)
VREF 1
10 GND
VMODE 2
Bias Control
9 GND
GND 3
8 RFOUT
RFIN 4
7 GND
VCC 5
6 VCC
Figure 1: Block Diagram
06/2003
1 page  
AWT6130
PARAMETER
Table 5: Electrical Specifications - CDMA Operation
(TC = +25 °C, VCC = +3.5 V, VREF = +2.9 V, 50 Ω system)
www.DataSheet4U.com
MIN TYP MAX UNIT
COMMENTS
Gain
Adjacent Channel Power
at ±885 kHz offset
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
Adjacent Channel Power
at ±1.98 MHz offset
Primary Channel BW = 1.23 MHz
Adjacent Channel BW = 30 kHz
25.5
-
-
-
-
-
28 30
26 -
-50 -46.5
-50 -46.5
-59 -56
-65 -57
dB
POUT = +29 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.9 V
dBc
POUT = +29 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.9 V
dBc
POUT = +29 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.9 V
Power-Added Efficiency
Quiescent Current (Icq)
Reference Current
Mode Control Current
Leakage Current
Noise in Receive Band
Harmonics
2fo
3fo, 4fo
Input Impedance
34 37.5
6.5 7.5
-
-
%
POUT = +29 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.9 V
- 50 65 mA VMODE = +2.9 V
- 3 5 mA through VREF pin
- 0.3 0.5 mA through VMODE pin
-
<1 5
µA
VCC = +4.2 V, VREF = 0 V
VMODE = 0 V
- -135 -133 dBm/Hz 869 MHz to 894 MHz
-
-
-40
-50
-30
-30
dBc
- - 2:1 VSWR
Spurious Output Level
(all spurious outputs)
POUT < +29 dBm
In-band load VSWR < 8:1
- - -70 dBc Out-of-band load VSWR < 10:1
Applies over all voltage and
temperature operating ranges
Load mismatch stress with no
permanent degradation or failure
8:1
-
VCC = +5.0 V, PIN = +5 dBm
- VSWR Applies over full operating
temperature range
PRELIMINARY DATA SHEET Rev 1.0
06/2003
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet AWT6130.PDF ] | |
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