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Número de pieza | APTGF90TDU60P | |
Descripción | Triple dual Common Source NPT IGBT Power Module | |
Fabricantes | Advanced Power Technology | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de APTGF90TDU60P (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! APTGF90TDU60Pwww.DataSheet4U.com
Triple dual Common Source
NPT IGBT Power Module
VCES = 600V
IC = 90A @ Tc = 80°C
C1
G1
E1
E2
G2
C2
C3
G3
E1/E2
E3
E4
G4
C4
C5
G5
E3/E4
E5
E6
G6
C6
C1
E1/E2
G1
E1
E2
G2
C2
C3
E3 /E4
G3
E3
E4
G4
C4
C5
E5 /E 6
G5
E5
E6
G6
C6
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
E5/E6 Features
• Non Punch Through (NPT) THUNDERBOLT IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
• Outstanding performance at high frequency
operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Easy paralleling due to positive TC of VCEsat
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
600
110
90
315
±20
416
315A @ 600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
1 page Turn-On Delay Time vs Collector Current
35
30
VGE = 15V
25
20
15
25
Tj = 25°C
VCE = 400V
RG = 5Ω
50 75 100 125
ICE, Collector to Emitter Current (A)
150
Current Rise Time vs Collector Current
80
VCE = 400V
60 RG = 5Ω
40 VGE=15V,
TJ=125°C
20
0
25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
8
VCE = 400V
6 RG = 5Ω
4
TJ=125°C,
VGE=15V
2
TJ=25°C,
VGE=15V
0
0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Gate Resistance
16
VCE = 400V
VGE = 15V
Eon, 180A
Eoff, 180A
12 TJ= 125°C
Eoff, 90A
8 Eon, 90A
Eoff, 45A
4
Eon, 45A
0
0 10 20 30 40 50
Gate Resistance (Ohms)
APTGF90TDU60Pwww.DataSheet4U.com
Turn-Off Delay Time vs Collector Current
250
200 VGE=15V,
TJ=125°C
150
100
50
25
VCE = 400V
RG = 5Ω
50
75
VGE=15V,
TJ=25°C
100 125 150
ICE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
80
VCE = 400V, VGE = 15V, RG = 5Ω
60
TJ = 125°C
40
20 TJ = 25°C
0
25 50 75 100 125
ICE, Collector to Emitter Current (A)
150
Turn-Off Energy Loss vs Collector Current
6
5
VCE = 400V
VGE = 15V
4 RG = 5Ω
TJ = 125°C
3 TJ = 25°C
2
1
0
0 25 50 75 100 125 150
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
10
VCE = 400V
VGE = 15V
8 RG = 5Ω
Eon, 180A
6 Eoff, 180A
4 Eon, 90A
2
Eoff, 45A
Eoff, 90A
Eon, 45A
0
0 25 50 75 100 125
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
5-6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet APTGF90TDU60P.PDF ] |
Número de pieza | Descripción | Fabricantes |
APTGF90TDU60P | Triple dual Common Source NPT IGBT Power Module | Advanced Power Technology |
APTGF90TDU60PG | Triple dual Common Source NPT IGBT Power Module | Microsemi Corporation |
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