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PDF APTGF350DU60G Data sheet ( Hoja de datos )
| Número de pieza | APTGF350DU60G | |
| Descripción | Dual common source NPT IGBT Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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APTGF350DU60Gwww.DataSheet4U.com
Dual common source
NPT IGBT Power Module
VCES = 600V
IC = 350A @ Tc = 80°C
C1 C2
Application
• AC Switches
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Q1
G1
E1
Q2
E
Features
G2 • Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
E2 - Switching frequency up to 100 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
G1 C1 E C2
E1
E2
G2
Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
RBSOA
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
Benefits
• Outstanding performance at high frequency
operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant
Tc = 25°C
Tc = 80°C
Tc = 25°C
Tc = 25°C
Tj = 150°C
Max ratings
600
430
350
1225
±20
1562
800A @ 600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1-6
1 page  
Turn-On Delay Time vs Collector Current
35
30
VGE = 15V
25
Tj = 25°C
20
VCE = 400V
RG = 1.25Ω
15
100 200 300 400 500
ICE, Collector to Emitter Current (A)
600
Current Rise Time vs Collector Current
80
VCE = 400V
60 RG = 1.25Ω
40
VGE =1 5V,
TJ=125°C
20
0
100
200 300 400 500
ICE, Collector to Emitter Current (A)
600
Turn-On Energy Loss vs Collector Current
32
VCE = 400V
24 RG = 1.25Ω
16
TJ=125°C,
VGE=15V
8
TJ=25°C,
VGE=15V
0
100
200 300 400 500
ICE, Collector to Emitter Current (A)
600
Switching Energy Losses vs Gate Resistance
64
VCE = 400V
Eon, 720A
VGE = 15V
48 TJ= 125°C
Eoff, 720A
Eoff, 360A
32 Eon, 360A
Eoff, 180A
16
Eon, 180A
0
0 2 4 6 8 10 12
Gate Resistance (Ohms)
APTGF350DU60Gwww.DataSheet4U.com
Turn-Off Delay Time vs Collector Current
250
200
VGE=15V,
TJ=125°C
150
100
VCE = 400V
RG = 1.25Ω
50
100 200
300
VGE=15V,
T J=2 5°C
400 500
600
ICE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
80
60
TJ = 125°C
40
TJ = 25°C
20
VCE = 400V, VGE = 15V, RG = 1.25Ω
0
100 200 300 400 500
ICE, Collector to Emitter Current (A)
600
Turn-Off Energy Loss vs Collector Current
24
20
VCE = 400V
VGE = 15V
16 RG = 1.25Ω
TJ = 125°C
12 TJ = 25°C
8
4
0
100 200 300 400 500 600
ICE, Collector to Emitter Current (A)
Switching Energy Losses vs Junction Temp.
40
VCE = 400V
VGE = 15V
32 RG = 1.25Ω
Eon, 720A
24 Eoff, 720A
16 Eon, 360A
8
Eoff, 180A
Eoff, 360A
Eon, 180A
0
0 25 50 75 100 125
TJ, Junction Temperature (°C)
www.microsemi.com
5-6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet APTGF350DU60G.PDF ] | |
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