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PDF FW507 Data sheet ( Hoja de datos )
| Número de pieza | FW507 | |
| Descripción | General-Purpose Switching Device | |
| Fabricantes | Sanyo Semicon Device | |
| Logotipo |  |
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Ordering number : ENN8403
FW507
www.DataSheet4U.com
FW507
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
Features
• Composite type with a low ON-resistance, ultrahigh-speed switching, low voltage drive, P-channel MOSFET and
a short reverse recovery time, low forward voltage schottky barrier diode facilitating high-density mounting.
• The FW507 incorporates two chips being equivalent to the MCH3312 and the SB1003M in one package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Marking : W507
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (3000mm2!0.8mm) ≤10s 1unit
50Hz sine wave, 1 cycle
Ratings
Unit
--30
±20
--3
--12
2
150
--55 to +125
V
V
A
A
W
°C
°C
30
35
1
5
--55 to +125
--55 to +125
V
V
A
A
°C
°C
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81205PA MS IM TB-00001717 No.8403-1/6
1 page  
FW507
IF -- VF
[SBD]
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7
Forward Voltage, VF -- V
IT07934
0.7
PF(AV) -- IO
[SBD]
Rectangular wave
(1) (2) (4) (3)
0.6
θ
0.5 360°
Sine wave
0.4
180°
0.3 360°
5
3
2
10007
5
3
2
1007
5
3
2
107
5
3
2
1.07
5
3
2
0.17
5
3
2
0.017
5
3
2
0.001
0
140
120
100
80
60
0.2 (1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
0.1 (3)Rectangular wave θ=180°
0 (4)Sine wave θ=180°
0 0.2 0.4 0.6 0.8 1.0 1.2
Average Output Current, IO -- A IT08184
C -- VR
[SBD]
3
f=1MHz
2
40
20
0
0
IR -- VwRww.DataSheet[4SUB.Dc]om
Ta=125°C
100°C
75°C
50°C
25°C
--25°C
10 20 30 40
Reverse Voltage, VR -- V
Tc -- IO
IT07935
[SBD]
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
(1) (2) (4) (3)
0.2 0.4 0.6 0.8 1.0 1.2
Average Output Current, IO -- A IT08185
100
7
5
3
2
10
0.1
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Reverse Voltage, VR -- V
IT07938
No.8403-5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet FW507.PDF ] | |
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