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STI11NM60ND Datasheet PDF - STMicroelectronics

Part Number STI11NM60ND
Description Power MOSFET
Manufacturers STMicroelectronics 
Logo STMicroelectronics Logo 

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STD11NM60ND, STF/I11NM60ND
STP11NM60ND, STU11NM60ND
N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET
I2PAK, TO-220, TO-220FP, IPAK, DPAK
Features
Order codes VDSS (@Tjmax) RDS(on) max ID
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
650 V
< 0.45 Ω
10 A
10 A(1)
10 A
10 A
10 A
1. Limited only by maximum temperature allowed
The worldwide best RDS(on)* area amongst the
fast recovery diode devices
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Extremely high dv/dt and avalanche
capabilities
Application
Switching applications
Description
The device is an N-channel FDmesh™ II Power
MOSFET that belongs to the second generation
of MDmesh™ technology. This revolutionary
Power MOSFET associates a new vertical
structure to the company's strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.It is therefore strongly
recommended for bridge topologies, in particular
ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
STD11NM60ND
STF11NM60ND
STI11NM60ND
STP11NM60ND
STU11NM60ND
11NM60ND
3
1
DPAK
3
2
1
TO-220
IPAK
3
2
1
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
$
'
3
!-V
Package
DPAK
TO-220FP
I2PAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
Tube
October 2010
Doc ID 14625 Rev 2
1/19
www.st.com
19

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STI11NM60ND equivalent
STD/F/I/P/U11NM60ND
2 Electrical characteristics
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
dv/dt(1) Drain-source voltage slope
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage drain
current (VGS = 0)
Gate body leakage current
(VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
ID = 1 mA, VGS= 0
VDD = 480 V,ID = 10 A,
VGS = 10 V
VDS = max rating,
VDS = max rating,@125 °C
VGS = ±20 V
VDS= VGS, ID = 250 µA
VGS= 10 V, ID= 5 A
600
3
45
4
0.37
1
100
100
5
0.45
V
V/ns
µA
µA
nA
V
Ω
1. Value measured at turn off under inductive load
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
gfs(1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =15 V, ID= 5 A
VDS = 50 V, f =1 MHz,
VGS = 0
- 7.5 -
850
- 44 -
5
S
pF
pF
pF
Coss
(2)
eq.
Equivalent output
capacitance
VGS = 0, VDS = 0V to 480 V -
130
-
pF
Rg Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level=20 mV
- 3.7 -
open drain
Ω
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 480 V, ID = 10 A
VGS = 10 V
(see Figure 19)
30 nC
- 4 - nC
16 nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Doc ID 14625 Rev 2
5/19


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