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Número de pieza | PT200S12 | |
Descripción | (PT200S12 / PT200S16) DIODE MODULE | |
Fabricantes | Nihon Inter Electronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de PT200S12 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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DIODE MODULE 200A/1200V/1600V PT200S12 PT200S16
FEATURES
* Isolated Base
* 3 Phase Bridge Circuit
* Designed Power Circuit Board
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
* Rectified For General Use
OUTLINE DRAWING
Maximum Ratings
Parameter
Repetitive Peak Reverse Voltage *1
Non Repetitive Peak Reverse Voltage *1
Symbol
VRRM
VRSM
Approx Net Weight:370g
Type / Grade
PT200S12
PT200S16
1200
1300
1600
1750
Unit
V
Parameter
Average Rectified Output Current
Surge Forward Current *1
I Squared t *1
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Mounting torque
Case mounting
Terminals
IO(AV)
IFSM
I2t
Tjw
Tstg
Viso
Ftor
Conditions
Max Rated
Value
Unit
3-Phase Full Wave Rectified
Tc=Tt(Terminal)=72°C
200 A
50 Hz Half Sine Wave,1Pulse
Non-repetitive
1850
A
2msec to 10msec
170000 A2s
-40 to +150 °C
-40 to +125 °C
Base Plate to Terminals, AC1min
2500
V
Greased
M5 Screw
M5
2.4 to 2.8
2.4 to 2.8
N•m
Electrical • Thermal Characteristics
Characteristics
Peak Reverse Current *1
Peak Forward Voltage *1
Thermal Resistance
*1: Value Per 1Arm
Symbol
Test Conditions
IRM VRM= VRRM, Tj= 150°C
VFM IFM= 200A, Tj=25°C
Rth(j-c) Junction to Case (Total)
Rth(c-f)
Base Plate to Heat
Compound (Total)
Sink
with
Thermal
Max. Unit
15 mA
1.35 V
0.1
0.06 °C/W
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet PT200S12.PDF ] |
Número de pieza | Descripción | Fabricantes |
PT200S12 | (PT200S12 / PT200S16) DIODE MODULE | Nihon Inter Electronics |
PT200S16 | (PT200S12 / PT200S16) DIODE MODULE | Nihon Inter Electronics |
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