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PDF C5622 Data sheet ( Hoja de datos )
| Número de pieza | C5622 | |
| Descripción | NPN Transistor - 2SC5622 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SC5622
Silicon NPN triple diffusion mesa type
For horizontal deflection output
I Features
• High breakdown voltage: 1 500 V
• High-speed switching
• Wide area of safe operation (ASO)
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power TC = 25°C
dissipation
Ta = 25°C
Junction temperature
Storage temperature
VCBO
VCES
VEBO
ICP
IC
IB
PC
Tj
Tstg
1 500
1 500
7
12
6
3
40
3
150
−55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
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15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3
5˚
5˚
(4.0)
2.0±0.2
5˚
5˚
5˚
1.1±0.1
0.7±0.1
5.45±0.3
10.9±0.5
5˚
12 3
1: Base
2: Collector
3: Emitter
TOP-3E Package
Marking Symbol: C5622
Internal Connection
C
B
E
I Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Diode forward voltage
Storage time
Fall time
ICBO
VEBO
hFE
VCE(sat)
VBE(sat)
fT
VF
tstg
tf
VCB = 1 000 V, IE = 0
VCB = 1 500 V, IE = 0
IE = 500 mA, IC = 0
VCE = 5 V, IC = 4 A
IC = 4 A, IB = 0.8 A
IC = 4 A, IB = 0.8 A
VCE = 10 V, IC = 0.1 A, f = 0.5 MHz
IF = 4 A
IC = 4 A, Resistance loaded
IB1 = 0.8 A, IB2 = −1.6 A
Min Typ Max Unit
50 µA
1 mA
7V
59
5V
1.5 V
3 MHz
−2 V
5.0 µs
0.5 µs
1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet C5622.PDF ] | |
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