TPC8039-H Datasheet PDF - Toshiba Semiconductor
Part Number | TPC8039-H | |
Description | Field Effect Transistor | |
Manufacturers | Toshiba Semiconductor | |
Logo | ||
There is a preview and TPC8039-H download ( pdf file ) link at the bottom of this page. Total 7 Pages |
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H)
TPC8039-H
High Efficiency DC-DC Converter Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
• Small footprint due to a small and thin package
• High-speed switching
• Small gate charge: QSW = 8.6 nC (typ.)
• Low drain-source ON-resistance: RDS (ON) = 4.1 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 60 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulsed (Note 1)
Drain power dissipation
(t = 10 s)
(Note 2a)
Drain power dissipation
(t = 10 s)
(Note 2b)
www.DataShSeinegt4leUp.cuolsme avalanche energy
(Note 3)
Avalanche current
Repetitive avalanche energy
(Note 2a) (Note 4)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
PD
EAS
IAR
EAR
Tch
Tstg
30
30
±20
17
68
1.9
1.0
188
17
0.15
150
−55 to 150
V
V
V
A
W
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-6J1B
Weight: 0.085 g (typ.)
Circuit Configuration
8765
Note: For Notes 1 to 4, refer to the next page.
1234
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
1 2008-09-16
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RDS (ON) – Ta
10
Common source
Pulse test
8
17 A
ID = 4.3, 8.5 A
6
4 VGS = 4.5 V
ID = 4.3, 8.5, 17 A
2 VGS = 10 V
0
−80 −40
0
40 80 120 160
Ambient temperature Ta (°C)
TPC8039-H
IDR – VDS
100
10
4.5
3
1
10
VGS = 0 V
Common source
Ta = 25°C
Pulse test
1
0
−0.2
−0.4
−0.6
−0.8
−1.0
Drain-source voltage VDS (V)
10000
Capacitance – VDS
1000
Ciss
Coss
100
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Crss
10
0.1 1 10 100
www.DataSheet4U.com Drain-source voltage VDS (V)
Vth – Ta
2.5
2
1.5
1
0.5
Common source
VDS = 10 V
ID = 0.5 mA
Pulse test
0
−80 −40
0
40 80 120
Ambient temperature Ta (°C)
160
2
(1)
1.5
(2)
1.0
PD – Ta
(1)Device mounted on a glass-epoxy
board(a) (Note 2a)
(2)Device mounted on a glass-epoxy
board(b) (Note 2b)
t=10 s
0.5
0
0 40 80 120 160
Ambient temperature Ta (°C)
Dynamic input/output
characteristics
40 Common source
ID = 17 A
Ta = 25°C
Pulse test
30
20 VDS
10
VDD = 6 V
24 V
12 V
16
12
8
4
00
0 10 20 30 40
Total gate charge Qg (nC)
5 2008-09-16
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for TPC8039-H electronic component. |
Information | Total 7 Pages | |
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